Specifications
SKU: 8647052
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 650 | - | V |
Gate-Source Voltage | VGS | -10 | 0 | 20 | V |
Continuous Drain Current | ID | - | 14 | - | A |
Pulse Drain Current | Ipp | - | 38 | - | A |
Gate Charge | Qg | - | 98 | - | nC |
Input Capacitance | Ciss | - | 1450 | - | pF |
Output Capacitance | Coss | - | 125 | - | pF |
Total Gate Charge | Qgt | - | 115 | - | nC |
RDS(on) at VGS = 10V | RDS(on) | - | 0.22 | - | Ω |
Junction Temperature | Tj | -55 | - | 150 | °C |
Storage Temperature | Tstg | -55 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- The MDF7N65BTH is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
- Avoid exposing the device to temperatures outside the specified range.
Mounting and Soldering:
- Ensure that the PCB layout provides adequate heat dissipation to prevent overheating.
- Follow recommended soldering profiles to avoid thermal shock and damage to the device.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Ensure that the gate-source voltage (VGS) is within the specified range to avoid damaging the gate oxide.
- The drain-source voltage (VDS) should not exceed 650V to prevent breakdown.
Thermal Management:
- Use a heatsink if necessary to maintain the junction temperature within safe limits.
- Monitor the temperature during operation to ensure it does not exceed 150°C.
Testing and Measurement:
- Use a high-impedance voltmeter to measure gate-source voltage (VGS).
- Measure drain-source resistance (RDS(on)) at the specified gate voltage to verify proper operation.
Storage:
- Store the device in a dry, cool place away from direct sunlight and corrosive substances.
- Keep the device in its original packaging until ready for use to protect against ESD.
Inquiry - MDF7N65BTH