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MDF7N65BTH

Specifications

SKU: 8647052

BUY MDF7N65BTH https://www.utsource.net/itm/p/8647052.html

Parameter Symbol Min Typical Max Unit
Drain-Source Voltage VDS - 650 - V
Gate-Source Voltage VGS -10 0 20 V
Continuous Drain Current ID - 14 - A
Pulse Drain Current Ipp - 38 - A
Gate Charge Qg - 98 - nC
Input Capacitance Ciss - 1450 - pF
Output Capacitance Coss - 125 - pF
Total Gate Charge Qgt - 115 - nC
RDS(on) at VGS = 10V RDS(on) - 0.22 - Ω
Junction Temperature Tj -55 - 150 °C
Storage Temperature Tstg -55 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • The MDF7N65BTH is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
    • Avoid exposing the device to temperatures outside the specified range.
  2. Mounting and Soldering:

    • Ensure that the PCB layout provides adequate heat dissipation to prevent overheating.
    • Follow recommended soldering profiles to avoid thermal shock and damage to the device.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Ensure that the gate-source voltage (VGS) is within the specified range to avoid damaging the gate oxide.
    • The drain-source voltage (VDS) should not exceed 650V to prevent breakdown.
  4. Thermal Management:

    • Use a heatsink if necessary to maintain the junction temperature within safe limits.
    • Monitor the temperature during operation to ensure it does not exceed 150°C.
  5. Testing and Measurement:

    • Use a high-impedance voltmeter to measure gate-source voltage (VGS).
    • Measure drain-source resistance (RDS(on)) at the specified gate voltage to verify proper operation.
  6. Storage:

    • Store the device in a dry, cool place away from direct sunlight and corrosive substances.
    • Keep the device in its original packaging until ready for use to protect against ESD.
(For reference only)

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