Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage power dissipation.
   • Handle with care to avoid damage to the gate oxide.

2. Biasing and Operation:

   • Apply gate-source voltage (VGS) within the specified range (-20V to +20V).
   • Ensure drain-source voltage (VDSS) does not exceed 600V.
   • Keep continuous drain current (ID) below 35A and pulse drain current (ICM) below 140A for 10μs pulses.

3. Thermal Management:

   • Monitor junction temperature (TJ) to ensure it stays within -55°C to 150°C.
   • Use appropriate cooling methods such as heatsinks or forced air cooling.

4. Capacitance Considerations:

   • Account for input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in circuit design to minimize switching losses and ensure stable operation.

5. Gate Drive:

   • Use a low impedance gate driver to minimize switching times and reduce switching losses.
   • Ensure the gate charge (QG) is considered in the gate drive circuit design.

6. Storage:

   • Store the device in a dry, cool environment within the storage temperature range (-55°C to 150°C).

7. Testing:

   • Perform initial testing under controlled conditions to verify the device parameters and ensure proper operation.

8. Safety:

   • Follow all safety guidelines and precautions when handling high-voltage and high-current components.
   • Use appropriate personal protective equipment (PPE) when necessary.