Share:
Specifications
SKU: 8647434
| Parameter | Description | Value |
|---|---|---|
| Part Number | JE350G | - |
| Type | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) | - |
| Package | TO-220AB | - |
| VDSS | Drain-to-Source Voltage | 350V |
| RDS(on) | On-State Resistance (at VGS = 10V) | 0.35Ω |
| ID | Continuous Drain Current (at 25°C) | 16A |
| ID (Pulse) | Pulse Drain Current (tp = 10μs) | 100A |
| PTOTAL | Total Power Dissipation (at TC = 25°C) | 125W |
| TJ | Junction Temperature Range | -55°C to +175°C |
| TSTG | Storage Temperature Range | -55°C to +150°C |
| VGS | Gate-to-Source Voltage | ±20V |
| QG | Total Gate Charge | 80nC |
| QGD | Gate-to-Drain Charge | 25nC |
| QGS | Gate-to-Source Charge | 15nC |
| fT | Transition Frequency | 3MHz |
Instructions for Use
Handling Precautions:
- ESD Protection: Handle the JE350G with care to avoid electrostatic discharge (ESD). Use ESD-safe tools and work surfaces.
- Polarity: Ensure correct polarity when connecting the MOSFET to the circuit. Incorrect polarity can lead to device failure.
Mounting:
- Heat Sinking: For high-power applications, use a suitable heat sink to maintain the junction temperature within the specified range.
- Torque: Apply the recommended torque to the mounting screws to ensure proper thermal contact without damaging the device.
Biasing:
- Gate Drive: Apply a gate voltage (VGS) of at least 10V to fully turn on the MOSFET and minimize RDS(on).
- Gate Resistor: Use a gate resistor to limit the current and prevent oscillations during switching.
Operating Conditions:
- Temperature: Monitor the ambient and junction temperatures to ensure they remain within the specified limits.
- Current Limiting: Implement current limiting measures to protect the MOSFET from overcurrent conditions.
Storage:
- Environment: Store the JE350G in a dry, cool place away from direct sunlight and sources of heat.
- Packaging: Keep the device in its original packaging until ready for use to protect against static and physical damage.
Testing:
- Initial Testing: Perform initial testing at low power levels to verify proper operation before using the device in high-power applications.
- Regular Inspection: Regularly inspect the device and connections for signs of wear or damage.
By following these instructions, you can ensure reliable and efficient operation of the JE350G MOSFET in your application.
(For reference only)Inquiry - JE350G
