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M29W640GT90NA6E

Specifications

SKU: 8647484

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IC FLASH 64M PARALLEL 48TSOP
Parameter Description Value
Device Type High Performance 64 Mbit (8M x 8) Serial Flash Memory -
Package Thin Small Outline Package (TSOP) 44-Pin TSOP
Operating Voltage Supply Voltage Range 2.7V to 3.6V
Operating Temperature Industrial Temperature Range -40°C to +85°C
Data Retention Data Retention Time 20 years
Programming Voltage Programming Voltage VPP = 12.0V
Access Time Typical Access Time 70 ns
Write Cycle Time Typical Write Cycle Time 1 ms
Erase Cycle Time Typical Erase Cycle Time 1 s (64K Block)
Endurance Endurance Cycles 100,000 cycles (64K Block)
Data Output Data Output Enable OE (Output Enable)
Write Protect Write Protect Pin WP (Write Protect)
Organization Memory Organization 8M x 8
Standby Current Standby Current (Typical) 1 μA
Active Current Active Current (Typical) 15 mA
Package Marking Device Marking M29W640GT90NA6E

Instructions for Use:

  1. Power Supply:

    • Connect the VCC pin to a power supply within the specified range (2.7V to 3.6V).
    • Ensure a stable power supply to avoid data corruption.
  2. Ground Connection:

    • Connect the GND pin to a common ground.
  3. Programming Voltage:

    • Apply the programming voltage (VPP = 12.0V) to the VPP pin during write and erase operations.
  4. Address and Data Lines:

    • Connect the address lines (A0-A22) to the appropriate address bus.
    • Connect the data lines (D0-D7) to the data bus.
  5. Control Signals:

    • CE (Chip Enable): Low to enable the device.
    • OE (Output Enable): Low to enable data output.
    • WE (Write Enable): Low to initiate write operations.
    • WP (Write Protect): High to allow writes, low to protect against accidental writes.
  6. Read Operation:

    • Set CE and OE low.
    • Apply the desired address to the address lines.
    • Read the data from the data lines after the access time (70 ns).
  7. Write Operation:

    • Set CE and WE low.
    • Apply the desired address to the address lines.
    • Apply the data to the data lines.
    • Hold WE low for the write cycle time (1 ms).
  8. Erase Operation:

    • Set CE and WE low.
    • Apply the appropriate erase command sequence.
    • Hold WE low for the erase cycle time (1 s for a 64K block).
  9. Standby Mode:

    • Set CE high to enter standby mode, reducing power consumption.
  10. Handling:

    • Handle the device with care to avoid static discharge.
    • Follow ESD (Electrostatic Discharge) precautions to prevent damage.
  11. Storage:

    • Store the device in a dry, cool place to ensure long-term reliability.
(For reference only)

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