Specifications
SKU: 8647484
IC FLASH 64M PARALLEL 48TSOP
Parameter | Description | Value |
---|---|---|
Device Type | High Performance 64 Mbit (8M x 8) Serial Flash Memory | - |
Package | Thin Small Outline Package (TSOP) | 44-Pin TSOP |
Operating Voltage | Supply Voltage Range | 2.7V to 3.6V |
Operating Temperature | Industrial Temperature Range | -40°C to +85°C |
Data Retention | Data Retention Time | 20 years |
Programming Voltage | Programming Voltage | VPP = 12.0V |
Access Time | Typical Access Time | 70 ns |
Write Cycle Time | Typical Write Cycle Time | 1 ms |
Erase Cycle Time | Typical Erase Cycle Time | 1 s (64K Block) |
Endurance | Endurance Cycles | 100,000 cycles (64K Block) |
Data Output | Data Output Enable | OE (Output Enable) |
Write Protect | Write Protect Pin | WP (Write Protect) |
Organization | Memory Organization | 8M x 8 |
Standby Current | Standby Current (Typical) | 1 μA |
Active Current | Active Current (Typical) | 15 mA |
Package Marking | Device Marking | M29W640GT90NA6E |
Instructions for Use:
Power Supply:
- Connect the VCC pin to a power supply within the specified range (2.7V to 3.6V).
- Ensure a stable power supply to avoid data corruption.
Ground Connection:
- Connect the GND pin to a common ground.
Programming Voltage:
- Apply the programming voltage (VPP = 12.0V) to the VPP pin during write and erase operations.
Address and Data Lines:
- Connect the address lines (A0-A22) to the appropriate address bus.
- Connect the data lines (D0-D7) to the data bus.
Control Signals:
- CE (Chip Enable): Low to enable the device.
- OE (Output Enable): Low to enable data output.
- WE (Write Enable): Low to initiate write operations.
- WP (Write Protect): High to allow writes, low to protect against accidental writes.
Read Operation:
- Set CE and OE low.
- Apply the desired address to the address lines.
- Read the data from the data lines after the access time (70 ns).
Write Operation:
- Set CE and WE low.
- Apply the desired address to the address lines.
- Apply the data to the data lines.
- Hold WE low for the write cycle time (1 ms).
Erase Operation:
- Set CE and WE low.
- Apply the appropriate erase command sequence.
- Hold WE low for the erase cycle time (1 s for a 64K block).
Standby Mode:
- Set CE high to enter standby mode, reducing power consumption.
Handling:
- Handle the device with care to avoid static discharge.
- Follow ESD (Electrostatic Discharge) precautions to prevent damage.
Storage:
- Store the device in a dry, cool place to ensure long-term reliability.
Inquiry - M29W640GT90NA6E