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Specifications
SKU: 8647756
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 500 | - | V | - |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | - |
| Continuous Drain Current | ID | - | 16 | - | A | TC = 25°C |
| Pulse Drain Current (tp = 10 μs, IGS = 10 A) | ID(p) | - | 78 | - | A | - |
| Power Dissipation | PD | - | 130 | - | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | - |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | - |
| Thermal Resistance, Junction to Case | RθJC | - | 1.5 | - | °C/W | - |
| Total Gate Charge | QG | - | 95 | - | nC | - |
| Input Capacitance | Ciss | - | 1600 | - | pF | VDS = 25V, f = 1 MHz |
| Output Capacitance | Coss | - | 350 | - | pF | VDS = 25V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 250 | - | pF | VDS = 25V, f = 1 MHz |
| Turn-On Delay Time | td(on) | - | 44 | - | ns | ID = 5 A, VGS = 10 V, RG = 10 Ω |
| Rise Time | tr | - | 49 | - | ns | ID = 5 A, VGS = 10 V, RG = 10 Ω |
| Turn-Off Delay Time | td(off) | - | 17 | - | ns | ID = 5 A, VGS = 10 V, RG = 10 Ω |
| Fall Time | tf | - | 40 | - | ns | ID = 5 A, VGS = 10 V, RG = 10 Ω |
Instructions for Use:
Handling Precautions:
- Avoid exceeding the maximum ratings specified in the table.
- Handle the device with care to prevent damage to the leads and the die.
- Use proper ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure good thermal management by using a heatsink if necessary.
- Apply thermal paste between the device and the heatsink for better heat dissipation.
- Secure the device to the PCB or heatsink to prevent mechanical stress.
Biasing:
- Apply the gate voltage (VGS) within the specified range to avoid damaging the gate oxide.
- Use appropriate gate resistors (RG) to control switching times and reduce ringing.
Operation:
- Operate the device within its safe operating area (SOA) to ensure reliable performance.
- Monitor the junction temperature (TJ) to avoid overheating.
- Ensure that the drain-source voltage (VDS) does not exceed the maximum rating during operation.
Testing:
- Use a suitable test setup to measure parameters such as on-resistance (RDS(on)), gate charge (QG), and switching times.
- Follow the conditions specified in the table for accurate measurements.
Storage:
- Store the device in a dry, cool place away from direct sunlight.
- Keep the device in its original packaging until ready for use to protect against moisture and static damage.
Inquiry - IRF640NSTRLPBF , F640NS
