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Specifications
SKU: 8648470
| Parameter | Description | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS(BR) | Drain-to-Source Breakdown Voltage | - | 600 | - | V |
| VGS(th) | Gate Threshold Voltage | 2.0 | 4.0 | 6.0 | V |
| ID(on) | Continuous Drain Current (TC=25°C) | - | 60 | - | A |
| ID(on) (TC=100°C) | Continuous Drain Current (TC=100°C) | - | 40 | - | A |
| RDS(on) | On-State Resistance (VGS=10V, TC=25°C) | - | 1.8 | - | Ω |
| RDS(on) (VGS=10V, TC=100°C) | On-State Resistance (VGS=10V, TC=100°C) | - | 2.5 | - | Ω |
| Qg | Total Gate Charge | - | 150 | - | nC |
| Eoss | Output Capacitance Energy | - | 120 | - | nJ |
| Tj | Junction Temperature | -55 | - | 150 | °C |
| Tstg | Storage Temperature Range | -55 | - | 150 | °C |
Instructions for Use:
Operating Conditions:
- Ensure that the drain-to-source voltage (VDS) does not exceed 600V.
- The gate threshold voltage (VGS(th)) ranges from 2.0V to 6.0V. Apply a gate voltage within this range to turn the MOSFET on.
- The continuous drain current (ID(on)) at 25°C is 60A, but it reduces to 40A at 100°C. Adjust the load accordingly to avoid overheating.
Thermal Management:
- The junction temperature (Tj) should be kept between -55°C and 150°C. Use appropriate heat sinks or cooling solutions to manage the temperature, especially under high current conditions.
- The storage temperature range (Tstg) is also from -55°C to 150°C. Store the device in a controlled environment to prevent damage.
Gate Drive:
- The total gate charge (Qg) is 150nC. Use a gate driver capable of providing sufficient current to charge and discharge the gate quickly, ensuring fast switching times and reduced switching losses.
Capacitance Considerations:
- The output capacitance energy (Eoss) is 120nJ. This affects the switching performance and should be considered when designing the circuit to minimize switching losses.
Handling Precautions:
- Handle the device with care to avoid static discharge, which can damage the sensitive gate oxide.
- Follow proper soldering techniques to ensure good thermal and electrical connections without causing mechanical stress to the device.
Mounting and Layout:
- Ensure proper PCB layout to minimize parasitic inductances and resistances, which can affect the performance and reliability of the MOSFET.
- Use wide and short traces for high-current paths to reduce resistance and inductance.
By following these guidelines, you can ensure optimal performance and longevity of the MM60F060B MOSFET in your application.
(For reference only)Inquiry - MM60F060B
