Instructions for Use:

1. Thermal Management:

   • Ensure adequate heat sinking to maintain the junction temperature within the specified limits.
   • The thermal resistance from the junction to the case (R_th(j-c)) is 0.5 K/W, and from the junction to the ambient (R_th(j-a)) is 0.8 K/W.

2. Voltage and Current Ratings:

   • Do not exceed the maximum drain-source voltage (V_DS) of 700V.
   • Continuous drain current (I_D) should not exceed 110A at 25°C ambient temperature.
   • For pulse conditions, the peak drain current (I_D(p)) can be up to 380A for a pulse duration of 10 μs with a gate current of 10A.

3. Gate Drive:

   • Apply a gate-source voltage (V_GS) between -20V and 20V.
   • Ensure the gate drive circuitry can provide sufficient current to charge and discharge the gate capacitance quickly.

4. Power Dissipation:

   • The total power dissipation (P_TOT) should not exceed 1400W at 25°C ambient temperature.
   • Use appropriate cooling methods (e.g., heatsinks, forced air cooling) to manage power dissipation and prevent overheating.

5. Temperature Limits:

   • The maximum junction temperature (T_J) is 175°C.
   • Store the device in an environment where the temperature ranges from -55°C to 150°C.

6. Soldering:

   • When soldering, ensure that the lead temperature does not exceed 300°C for more than 10 seconds.

7. Handling:

   • Handle the device with care to avoid mechanical damage.
   • Use ESD protection measures to prevent damage from static electricity.

For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.