BUY MRFE6VP8600HR5 https://www.utsource.net/itm/p/8663115.html

Description: The MRFE6VP8600HR5 is a high power, 50-ohm, GaN-on-SiC, high-efficiency, high-linearity, wideband, single-ended, RF power transistor from Freescale Semiconductor. It is designed for use in high-power, high-efficiency, wideband, linear, and Doherty amplifier applications in the 6 GHz frequency range. Features: High power: P1dB = 65 dBm High efficiency: PAE = 40% High linearity: IM3 = -32 dBc Wideband operation: 6 GHz Single-ended design GaN-on-SiC technology Applications: Wi-Fi 802.11a/n/ac WiMAX 802.16e Point-to-point radio Point-to-multipoint radio Radar systems Test and measurement equipment (For reference only)