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STGD6NC60H

Specifications

SKU: 8810250

BUY STGD6NC60H https://www.utsource.net/itm/p/8810250.html

Parameter Symbol Min Typical Max Unit Description
Breakdown Voltage V(BR)DSS - 600 - V Drain-to-Source Breakdown Voltage (at ID = 250 μA, Tj = 25°C)
Continuous Drain Current ID - 6 - A Continuous Drain Current (Tc = 25°C)
Continuous Drain Current ID(TC) - 4 - A Continuous Drain Current (Tc = 100°C)
Pulse Drain Current IDM - 36 - A Pulse Drain Current (t = 10 ms, Tj = 25°C)
Gate Threshold Voltage VGS(th) 2 4 6 V Gate Threshold Voltage (ID = 250 μA, Tj = 25°C)
On-State Resistance RDS(on) - 0.065 - Ω On-State Resistance (VGS = 10 V, ID = 6 A, Tj = 25°C)
Input Capacitance Ciss - 1750 - pF Input Capacitance (VDS = 0 V, f = 1 MHz)
Output Capacitance Coss - 380 - pF Output Capacitance (VDS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance Crss - 1370 - pF Reverse Transfer Capacitance (VDS = 0 V, f = 1 MHz)
Total Gate Charge Qg - 95 - nC Total Gate Charge (VGS = 15 V, VDS = 400 V, ID = 6 A)
Gate-to-Source Charge Qgs - 27 - nC Gate-to-Source Charge (VGS = 15 V, VDS = 400 V, ID = 6 A)
Gate-to-Drain Charge Qgd - 68 - nC Gate-to-Drain Charge (VGS = 15 V, VDS = 400 V, ID = 6 A)
Switching Energy Eoss - 1.1 - μJ Output Capacitance Energy (VDS = 400 V, ID = 6 A)
Switching Energy Eon - 0.5 - μJ Turn-On Energy (VGS = 15 V, VDS = 400 V, ID = 6 A)
Switching Energy Eoff - 0.6 - μJ Turn-Off Energy (VGS = 15 V, VDS = 400 V, ID = 6 A)
Junction Temperature Tj - - 175 °C Maximum Junction Temperature
Storage Temperature Tstg -55 - 150 °C Operating and Storage Temperature Range

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper handling to avoid damage to the device.
    • Use appropriate heat sinks or cooling methods to manage the junction temperature, especially during high current operations.
  2. Electrical Connections:

    • Connect the drain, source, and gate terminals correctly to avoid short circuits or incorrect operation.
    • Use short and direct connections to minimize parasitic inductance and capacitance.
  3. Gate Drive:

    • Apply a gate voltage (VGS) within the specified range to ensure reliable turn-on and turn-off.
    • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
  4. Thermal Management:

    • Monitor the junction temperature to prevent overheating.
    • Use thermal paste and heatsinks to improve heat dissipation.
  5. Overvoltage Protection:

    • Implement overvoltage protection circuits to safeguard against transient voltages exceeding the breakdown voltage.
  6. Storage and Transportation:

    • Store the device in a dry and cool environment to prevent moisture damage.
    • Handle with care during transportation to avoid mechanical stress.
  7. Safety Precautions:

    • Follow all safety guidelines and regulations when working with high voltages and currents.
    • Use appropriate personal protective equipment (PPE) when handling the device.

For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.

(For reference only)

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