Specifications
SKU: 8810250
Parameter | Symbol | Min | Typical | Max | Unit | Description |
---|---|---|---|---|---|---|
Breakdown Voltage | V(BR)DSS | - | 600 | - | V | Drain-to-Source Breakdown Voltage (at ID = 250 μA, Tj = 25°C) |
Continuous Drain Current | ID | - | 6 | - | A | Continuous Drain Current (Tc = 25°C) |
Continuous Drain Current | ID(TC) | - | 4 | - | A | Continuous Drain Current (Tc = 100°C) |
Pulse Drain Current | IDM | - | 36 | - | A | Pulse Drain Current (t = 10 ms, Tj = 25°C) |
Gate Threshold Voltage | VGS(th) | 2 | 4 | 6 | V | Gate Threshold Voltage (ID = 250 μA, Tj = 25°C) |
On-State Resistance | RDS(on) | - | 0.065 | - | Ω | On-State Resistance (VGS = 10 V, ID = 6 A, Tj = 25°C) |
Input Capacitance | Ciss | - | 1750 | - | pF | Input Capacitance (VDS = 0 V, f = 1 MHz) |
Output Capacitance | Coss | - | 380 | - | pF | Output Capacitance (VDS = 0 V, f = 1 MHz) |
Reverse Transfer Capacitance | Crss | - | 1370 | - | pF | Reverse Transfer Capacitance (VDS = 0 V, f = 1 MHz) |
Total Gate Charge | Qg | - | 95 | - | nC | Total Gate Charge (VGS = 15 V, VDS = 400 V, ID = 6 A) |
Gate-to-Source Charge | Qgs | - | 27 | - | nC | Gate-to-Source Charge (VGS = 15 V, VDS = 400 V, ID = 6 A) |
Gate-to-Drain Charge | Qgd | - | 68 | - | nC | Gate-to-Drain Charge (VGS = 15 V, VDS = 400 V, ID = 6 A) |
Switching Energy | Eoss | - | 1.1 | - | μJ | Output Capacitance Energy (VDS = 400 V, ID = 6 A) |
Switching Energy | Eon | - | 0.5 | - | μJ | Turn-On Energy (VGS = 15 V, VDS = 400 V, ID = 6 A) |
Switching Energy | Eoff | - | 0.6 | - | μJ | Turn-Off Energy (VGS = 15 V, VDS = 400 V, ID = 6 A) |
Junction Temperature | Tj | - | - | 175 | °C | Maximum Junction Temperature |
Storage Temperature | Tstg | -55 | - | 150 | °C | Operating and Storage Temperature Range |
Instructions for Use:
Mounting and Handling:
- Ensure proper handling to avoid damage to the device.
- Use appropriate heat sinks or cooling methods to manage the junction temperature, especially during high current operations.
Electrical Connections:
- Connect the drain, source, and gate terminals correctly to avoid short circuits or incorrect operation.
- Use short and direct connections to minimize parasitic inductance and capacitance.
Gate Drive:
- Apply a gate voltage (VGS) within the specified range to ensure reliable turn-on and turn-off.
- Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Thermal Management:
- Monitor the junction temperature to prevent overheating.
- Use thermal paste and heatsinks to improve heat dissipation.
Overvoltage Protection:
- Implement overvoltage protection circuits to safeguard against transient voltages exceeding the breakdown voltage.
Storage and Transportation:
- Store the device in a dry and cool environment to prevent moisture damage.
- Handle with care during transportation to avoid mechanical stress.
Safety Precautions:
- Follow all safety guidelines and regulations when working with high voltages and currents.
- Use appropriate personal protective equipment (PPE) when handling the device.
For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.
(For reference only)Inquiry - STGD6NC60H