BUY GT30J127 30J127 IGBT TOSHIBA TO220F https://www.utsource.net/itm/p/8853206.html

Description: The GT30J127 30J127 IGBT is a high-speed, high-voltage, low-saturation voltage, N-channel insulated gate bipolar transistor (IGBT) manufactured by Toshiba. It is housed in a TO220F package and has a maximum collector-emitter voltage of 1200V. The device is suitable for high-speed switching applications such as motor control and power conversion. Features: High-speed switching Low saturation voltage High collector-emitter voltage of 1200V TO220F package Low on-state resistance Applications: Motor control Power conversion Inverters DC-DC converters AC-DC converters (For reference only)