Specifications
SKU: 8853221
Parameter | Value | Unit |
---|---|---|
Type | NPN Transistor | - |
Collector-Emitter Voltage (Vce) | 30 | V |
Collector-Base Voltage (Vcb) | 45 | V |
Emitter-Base Voltage (Veb) | 6 | V |
Collector Current (Ic) | 200 | mA |
Power Dissipation (Ptot) | 625 | mW |
DC Current Gain (hFE) | 100 to 300 | - |
Transition Frequency (ft) | 300 | MHz |
Storage Temperature Range (Tstg) | -65 to +150 | °C |
Operating Temperature Range (Tamb) | -65 to +150 | °C |
Package Type | SOT-23 | - |
Instructions for Use:
Handling:
- Handle with care to avoid damage to the leads or the body.
- Use proper ESD (Electrostatic Discharge) precautions to prevent damage.
Mounting:
- Ensure the correct orientation of the transistor during mounting.
- Apply gentle pressure when soldering to avoid excessive stress on the leads.
- Use a temperature-controlled soldering iron and do not exceed 300°C for more than 3 seconds per lead.
Soldering:
- Pre-tin the leads and the PCB pads before soldering.
- Allow the solder joints to cool naturally without movement.
Testing:
- Test the transistor in a controlled environment to ensure it meets the specified parameters.
- Use a multimeter or a transistor tester to verify the functionality.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Keep in original packaging until ready for use to protect against static and physical damage.
Applications:
- Suitable for general-purpose switching and amplification applications.
- Ideal for use in consumer electronics, automotive, and industrial control systems.
Inquiry - MMBT589LT1G