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MMBT589LT1G

Specifications

SKU: 8853221

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Parameter Value Unit
Type NPN Transistor -
Collector-Emitter Voltage (Vce) 30 V
Collector-Base Voltage (Vcb) 45 V
Emitter-Base Voltage (Veb) 6 V
Collector Current (Ic) 200 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100 to 300 -
Transition Frequency (ft) 300 MHz
Storage Temperature Range (Tstg) -65 to +150 °C
Operating Temperature Range (Tamb) -65 to +150 °C
Package Type SOT-23 -

Instructions for Use:

  1. Handling:

    • Handle with care to avoid damage to the leads or the body.
    • Use proper ESD (Electrostatic Discharge) precautions to prevent damage.
  2. Mounting:

    • Ensure the correct orientation of the transistor during mounting.
    • Apply gentle pressure when soldering to avoid excessive stress on the leads.
    • Use a temperature-controlled soldering iron and do not exceed 300°C for more than 3 seconds per lead.
  3. Soldering:

    • Pre-tin the leads and the PCB pads before soldering.
    • Allow the solder joints to cool naturally without movement.
  4. Testing:

    • Test the transistor in a controlled environment to ensure it meets the specified parameters.
    • Use a multimeter or a transistor tester to verify the functionality.
  5. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Keep in original packaging until ready for use to protect against static and physical damage.
  6. Applications:

    • Suitable for general-purpose switching and amplification applications.
    • Ideal for use in consumer electronics, automotive, and industrial control systems.
(For reference only)

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