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P1260ATF

Specifications

SKU: 8853228

BUY P1260ATF https://www.utsource.net/itm/p/8853228.html

Parameter Value Unit
Part Number P1260ATF -
Type MOSFET -
Package TO-220 -
Maximum Drain Voltage 600 V
Maximum Gate-Source Voltage ±20 V
Maximum Drain Current 12 A
Continuous Drain Current 6 A
Power Dissipation 85 W
Junction Temperature -55 to +150 °C
Storage Temperature -55 to +150 °C
Rds(on) (Vgs=10V) 0.14 Ω
Input Capacitance 1500 pF
Output Capacitance 600 pF
Reverse Transfer Capacitance 350 pF
Total Gate Charge 75 nC

Instructions for Use:

  1. Handling Precautions:

    • Handle the device with care to avoid mechanical damage.
    • Use proper ESD protection to prevent damage from static electricity.
  2. Mounting:

    • Ensure the mounting surface is clean and flat.
    • Apply thermal paste between the device and heatsink for better heat dissipation.
    • Torque the mounting screws to the recommended specifications to avoid over-tightening.
  3. Electrical Connections:

    • Connect the drain, source, and gate terminals correctly.
    • Use appropriate wire gauges to handle the current ratings.
    • Ensure all connections are secure and free from shorts.
  4. Thermal Management:

    • Ensure adequate cooling to keep the junction temperature within the specified range.
    • Consider forced air cooling or a larger heatsink for high-power applications.
  5. Operational Parameters:

    • Do not exceed the maximum ratings for voltage, current, and power dissipation.
    • Operate the device within the specified temperature range to ensure reliable performance.
  6. Testing:

    • Perform initial testing at low power levels to verify correct operation.
    • Monitor the device temperature during operation to ensure it remains within safe limits.
  7. Storage:

    • Store the device in a dry, cool place away from direct sunlight.
    • Keep the device in its original packaging until ready for use to protect against ESD.
(For reference only)

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