BUY BSM200GA120DN2C https://www.utsource.net/itm/p/8853244.html

Description: BSM200GA120DN2C is an insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: Maximum collector-emitter voltage of 1200V Maximum collector current of 200A Maximum junction temperature of 150°C Low switching losses High power density Applications: BSM200GA120DN2C is suitable for applications such as motor drives, welding machines, UPS systems, and solar inverters. (For reference only)