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Specifications
SKU: 8909383
| Parameter | Symbol | Min | Typical | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | V(DS) | - | 400 | - | V |
| Gate-Source Voltage | V(GS) | -15 | - | 15 | V |
| Drain Current (Continuous) | I(D) | - | 8 | - | A |
| Drain Current (Pulse) | I(DM) | - | 16 | - | A |
| Power Dissipation | P(T) | - | 90 | - | W |
| Junction Temperature | T(J) | - | - | 175 | °C |
| Storage Temperature | T(STG) | -55 | - | 150 | °C |
| Gate Charge | Q(G) | - | 30 | - | nC |
| Input Capacitance | C(ISS) | - | 1200 | - | pF |
| Output Capacitance | C(OSS) | - | 250 | - | pF |
| Reverse Transfer Capacitance | C(RSS) | - | 200 | - | pF |
| Threshold Gate Voltage | V(GST) | 2 | 4 | 6 | V |
| On-State Resistance | R(DSON) | - | 0.6 | - | Ω |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use appropriate mounting hardware to secure the device.
Biasing:
- Apply gate-source voltage (V(GS)) within the specified range to avoid damage.
- Ensure that the drain current (I(D)) does not exceed the continuous or pulse ratings.
Operation:
- Operate the device within the specified drain-source voltage (V(DS)) to prevent breakdown.
- Monitor the power dissipation (P(T)) to avoid overheating.
Storage:
- Store the device in a dry, cool environment within the storage temperature range (-55°C to 150°C).
Handling:
- Handle with care to avoid mechanical stress and electrostatic discharge (ESD).
- Use ESD protection equipment when handling the device.
Testing:
- Perform all tests under controlled conditions to ensure accurate measurements.
- Refer to the datasheet for specific test conditions and procedures.
Inquiry - K1522 2SK1522
