BUY SIHB30N60E-GE3 https://www.utsource.net/itm/p/8911371.html

Description: The SIHB30N60E-GE3 is a N-channel MOSFET with a maximum drain source voltage of 600V and a maximum drain current of 30A. It is designed to be used in high power switching applications. Features: Low on-resistance Low gate charge Low input capacitance High current handling capability High frequency operation RoHS compliant Applications: Automotive Motor control Power supplies Uninterruptible power supplies Lighting Home appliances (For reference only)