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C5027F-R

Specifications

SKU: 8915011

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Description: The C5027F-R is a NPN silicon epitaxial transistor manufactured by Toshiba. It is designed for use in general purpose amplifier and switching applications. Features: -High voltage: VCEO = -50V -High current gain: hFE = 100 (typical) -Low saturation voltage: VCE(sat) = -0.3V (typical) -Low collector-emitter leakage current: ICEO = 10μA (typical) -High switching speed Applications: -General purpose amplifier -Switching applications -Audio amplifiers -DC-DC converters -DC-AC inverters -Motor control circuits (For reference only)

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