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Specifications
SKU: 8928049
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Breakdown Voltage | V(BR)DSS | - | 600 | - | V | Drain-to-source breakdown voltage |
| Continuous Drain Current (Tc = 25°C) | ID | - | 30 | - | A | Continuous drain current at 25°C case temperature |
| Continuous Drain Current (Tc = 70°C) | ID | - | 18 | - | A | Continuous drain current at 70°C case temperature |
| Pulse Drain Current (t = 10 μs, Duty Cycle = 1%) | Ipp | - | 150 | - | A | Pulse drain current for 10 μs pulse width, 1% duty cycle |
| Gate-Source Voltage | VGS | -15 | 0 | 15 | V | Gate-to-source voltage |
| Input Capacitance | Ciss | - | 1400 | - | pF | Input capacitance at VDS = 300V, VGS = 0V |
| Output Capacitance | Coss | - | 450 | - | pF | Output capacitance at VDS = 300V, VGS = 0V |
| Reverse Transfer Capacitance | Crss | - | 350 | - | pF | Reverse transfer capacitance at VDS = 300V, VGS = 0V |
| Total Gate Charge | Qg | - | 90 | - | nC | Total gate charge at VDS = 300V, VGS = 15V, ID = 30A |
| Turn-on Delay Time | td(on) | - | 100 | - | ns | Turn-on delay time from 10% VGS to 10% ID |
| Rise Time | tr | - | 60 | - | ns | Rise time from 10% ID to 90% ID |
| Turn-off Delay Time | td(off) | - | 100 | - | ns | Turn-off delay time from 90% VGS to 90% ID |
| Fall Time | tf | - | 60 | - | ns | Fall time from 90% ID to 10% ID |
| Junction Temperature | TJ | -55 | - | 150 | °C | Operating junction temperature range |
| Storage Temperature | Tstg | -55 | - | 150 | °C | Storage temperature range |
Instructions:
Mounting and Handling:
- Ensure proper handling to avoid static damage.
- Use appropriate mounting techniques to ensure good thermal contact with the heat sink.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Ensure adequate cooling to keep the junction temperature within the specified range.
Gate Drive:
- Apply a gate-source voltage (VGS) between -15V and +15V.
- Use a low impedance driver to minimize switching times and reduce power loss.
Pulse Operation:
- For pulse operation, ensure that the pulse width and duty cycle do not exceed the specified limits to avoid overheating.
Capacitance Considerations:
- Account for the input, output, and reverse transfer capacitances when designing the gate drive circuit to optimize performance.
Thermal Management:
- Use a suitable heat sink to manage the thermal resistance and maintain the device within its safe operating area.
Storage:
- Store the device in a dry, cool place within the specified storage temperature range to prevent damage.
Testing:
- Perform initial testing under controlled conditions to verify the device parameters and ensure it meets the application requirements.
Inquiry - IKCM30F60GA
