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FGL35N120FTD

Specifications

SKU: 8928289

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Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCE - 1200 - V
Gate-Source Voltage VGS -20 - 20 V
Continuous Collector Current IC - 35 - A
Pulse Collector Current IC(rms) - 70 - A
Power Dissipation PTOT - 480 - W
Junction Temperature TJ -55 - 175 °C
Storage Temperature TSTG -55 - 150 °C
Total Gate Charge QG - 90 - nC
Input Capacitance Ciss - 2300 - pF
Output Capacitance Coss - 260 - pF
Reverse Transfer Capacitance Crss - 440 - pF

Instructions for Use:

  1. Voltage Ratings:

    • Ensure that the maximum Collector-Emitter voltage (VCE) does not exceed 1200V.
    • The Gate-Source voltage (VGS) should be within the range of -20V to +20V.
  2. Current Ratings:

    • The continuous Collector current (IC) should not exceed 35A.
    • For pulse applications, the peak Collector current (IC(rms)) can go up to 70A.
  3. Power Dissipation:

    • The total power dissipation (PTOT) should not exceed 480W to avoid overheating.
  4. Temperature Considerations:

    • The junction temperature (TJ) must be kept between -55°C and 175°C.
    • The storage temperature (TSTG) should be within -55°C to 150°C.
  5. Capacitance and Charge:

    • The total gate charge (QG) is typically 90nC.
    • Input capacitance (Ciss) is approximately 2300pF.
    • Output capacitance (Coss) is around 260pF.
    • Reverse transfer capacitance (Crss) is about 440pF.
  6. Handling and Mounting:

    • Handle the device with care to avoid damage to the leads and body.
    • Ensure proper heat sinking to manage the power dissipation and maintain the junction temperature within safe limits.
  7. Testing and Operation:

    • Always refer to the datasheet for detailed testing procedures and operational guidelines.
    • Use appropriate protective equipment and follow safety protocols when handling high-voltage components.
(For reference only)

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