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FDP150N10 TO-220

Specifications

SKU: 8929199

BUY FDP150N10 TO-220 https://www.utsource.net/itm/p/8929199.html

Parameter Symbol Min Typ Max Unit
Drain-Source Voltage VDS - 100 - V
Gate-Source Voltage VGS -10 0 20 V
Continuous Drain Current ID - 150 - A
Pulse Drain Current IDpeak - 450 - A
Power Dissipation PTOT - 150 - W
Junction Temperature TJ - - 175 °C
Storage Temperature TSTG -55 - 150 °C
Thermal Resistance, Junction to Case RθJC - 0.65 - °C/W

Instructions for Use:

  1. Mounting and Handling:

    • Ensure that the device is mounted on a heatsink if operating at high power levels to maintain junction temperature within safe limits.
    • Handle the device with care to avoid damage to the leads and the body.
  2. Electrical Connections:

    • Connect the drain (D) to the load or circuit being controlled.
    • Connect the source (S) to the return path of the circuit.
    • Apply the gate (G) voltage to control the switching of the device.
  3. Gate Drive:

    • Apply a gate-source voltage (VGS) of at least 10V to fully turn on the MOSFET.
    • For reliable operation, keep the gate-source voltage within the specified range (-10V to +20V).
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed 175°C.
    • Use appropriate thermal management techniques such as heatsinks, fans, or heat spreaders to dissipate heat effectively.
  5. Storage and Operating Conditions:

    • Store the device in a dry, cool place within the storage temperature range (-55°C to 150°C).
    • Operate the device within the specified operating conditions to ensure reliability and longevity.
  6. Safety Precautions:

    • Avoid exceeding the maximum ratings listed in the parameter table to prevent damage to the device.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.
(For reference only)

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