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2SC4410

Specifications

SKU: 8935417

BUY 2SC4410 https://www.utsource.net/itm/p/8935417.html
2SC4410 NPN Transistors(BJT) 10V 10mA 4GHz 50~200 SOT-323/SC-70 marking 2X ultra high-frequency amplifier
Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 60 V
Collector-Base Voltage VCBO - - 80 V
Emitter-Base Voltage VEBO -5 - -1 V
Collector Current IC - - 3 A
Base Current IB - - 0.3 A
Power Dissipation PD - - 65 W
Junction Temperature Tj -55 - 150 °C
Storage Temperature Tstg -65 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure the 2SC4410 is mounted on a suitable heatsink to manage heat dissipation effectively.
    • Use thermal compound between the transistor and the heatsink to enhance thermal conductivity.
  2. Biasing:

    • Set the base current (IB) to ensure the transistor operates within its safe operating area (SOA).
    • Use a current-limiting resistor in series with the base to prevent excessive base current.
  3. Protection:

    • Install a reverse-biased diode across the collector and emitter to protect against inductive spikes if the transistor is used in switching applications.
    • Consider using a Zener diode in parallel with the base-emitter junction to protect against overvoltage conditions.
  4. Operating Conditions:

    • Do not exceed the maximum ratings specified in the table to avoid damage to the transistor.
    • Monitor the junction temperature (Tj) to ensure it remains within the operational range.
  5. Storage:

    • Store the 2SC4410 in a dry environment to prevent moisture damage.
    • Handle the transistor with care to avoid mechanical stress, which can affect performance.
  6. Testing:

    • Use a multimeter or a transistor tester to verify the functionality of the 2SC4410 before installation.
    • Test the transistor under controlled conditions to ensure it meets the required specifications.
(For reference only)

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