Share:
Specifications
SKU: 8941785
| Parameter | IKW40N65WR5 | K40EWR5 |
|---|---|---|
| Type | MOSFET | MOSFET |
| VDS (Max) [V] | 650 | 600 |
| VGS(th) [V] | 2.0 to 4.0 | 2.0 to 4.0 |
| RDS(on) [mΩ] @ VGS=10V | 150 | 170 |
| ID (Max) [A] | 40 | 40 |
| Power Dissipation (Ptot) [W] | 380 | 380 |
| Package | TO-247-3L | TO-247-3L |
| Operating Temperature Range [°C] | -55 to 150 | -55 to 150 |
| Storage Temperature Range [°C] | -55 to 150 | -55 to 150 |
| Gate Charge (QG) [nC] | 65 | 60 |
| Input Capacitance (Ciss) [pF] | 2100 | 2000 |
| Output Capacitance (Coss) [pF] | 280 | 270 |
| Reverse Transfer Capacitance (Crss) [pF] | 580 | 550 |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain operating temperature within the specified range.
- Use a thermal compound between the device and the heatsink for better thermal conductivity.
Biasing:
- Apply a gate-source voltage (VGS) within the specified threshold range to turn the MOSFET on.
- Ensure the gate-source voltage does not exceed the maximum rating to avoid damage.
Current Handling:
- Do not exceed the maximum drain current (ID) to prevent overheating and potential failure.
- Consider derating the current based on ambient temperature and cooling conditions.
Switching:
- Minimize switching losses by ensuring fast and clean transitions between on and off states.
- Use appropriate gate drive circuits to achieve optimal performance.
Storage:
- Store the devices in a dry, cool place away from direct sunlight.
- Handle with care to avoid mechanical damage and static discharge.
Testing:
- Perform initial testing under controlled conditions to verify correct operation.
- Monitor temperature and electrical parameters during operation to ensure reliability.
Inquiry - IKW40N65WR5，K40EWR5
