Specifications
SKU: 8941800
Parameter | Symbol | Value | Unit |
---|---|---|---|
Maximum Collector-Emitter Voltage | VCEO | 1300 | V |
Maximum Emitter-Base Voltage | VEBO | 8 | V |
Maximum Collector Current | IC | 80 | A |
Maximum Power Dissipation | PT | 500 | W |
Maximum Junction Temperature | TJ | 150 | °C |
Storage Temperature Range | TSTG | -65 to 150 | °C |
Transition Frequency | fT | 2.5 | MHz |
Collector-Emitter Saturation Voltage | VCE(sat) | 1.8 (IC=10A) | V |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to manage the maximum power dissipation.
- Handle with care to avoid mechanical stress on the leads and the body.
Electrical Connections:
- Connect the collector (C), emitter (E), and base (B) terminals correctly.
- Use appropriate wire gauges to handle the high current and voltage levels.
Thermal Management:
- The device can operate at high temperatures, but ensure that the junction temperature does not exceed 150°C.
- Use thermal paste between the transistor and the heatsink for better thermal conductivity.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Operate within the safe operating area (SOA) to prevent damage due to excessive power dissipation.
Storage:
- Store in a dry place within the temperature range of -65°C to 150°C.
- Avoid exposure to corrosive environments.
Testing:
- Use a suitable test setup to verify the parameters before installation.
- Ensure all connections are secure and correct to avoid short circuits or incorrect readings.
Safety:
- Always use appropriate safety measures when handling high-voltage and high-current components.
- Follow local electrical safety regulations and guidelines.
Inquiry - 13N80K5