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13N80K5

Specifications

SKU: 8941800

BUY 13N80K5 https://www.utsource.net/itm/p/8941800.html

Parameter Symbol Value Unit
Maximum Collector-Emitter Voltage VCEO 1300 V
Maximum Emitter-Base Voltage VEBO 8 V
Maximum Collector Current IC 80 A
Maximum Power Dissipation PT 500 W
Maximum Junction Temperature TJ 150 °C
Storage Temperature Range TSTG -65 to 150 °C
Transition Frequency fT 2.5 MHz
Collector-Emitter Saturation Voltage VCE(sat) 1.8 (IC=10A) V

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to manage the maximum power dissipation.
    • Handle with care to avoid mechanical stress on the leads and the body.
  2. Electrical Connections:

    • Connect the collector (C), emitter (E), and base (B) terminals correctly.
    • Use appropriate wire gauges to handle the high current and voltage levels.
  3. Thermal Management:

    • The device can operate at high temperatures, but ensure that the junction temperature does not exceed 150°C.
    • Use thermal paste between the transistor and the heatsink for better thermal conductivity.
  4. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Operate within the safe operating area (SOA) to prevent damage due to excessive power dissipation.
  5. Storage:

    • Store in a dry place within the temperature range of -65°C to 150°C.
    • Avoid exposure to corrosive environments.
  6. Testing:

    • Use a suitable test setup to verify the parameters before installation.
    • Ensure all connections are secure and correct to avoid short circuits or incorrect readings.
  7. Safety:

    • Always use appropriate safety measures when handling high-voltage and high-current components.
    • Follow local electrical safety regulations and guidelines.
(For reference only)

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