Specifications
SKU: 8944590
Parameter | IRFB7730 / IRFB7730PBF |
---|---|
Device Type | N-Channel MOSFET |
VDS (Max) | 60 V |
VGS (Max) | ±20 V |
ID (Continuous, @ 25°C) | 14 A |
ID (Pulsed, @ 25°C) | 35 A |
RDS(on) (Max, @ VGS = 10 V) | 8 mΩ |
RDS(on) (Max, @ VGS = 4.5 V) | 12 mΩ |
Power Dissipation (PTOT, @ 25°C) | 98 W |
Junction Temperature (TJ) | -55°C to 150°C |
Storage Temperature (TSTG) | -55°C to 150°C |
Package | TO-220AB |
RoHS Compliant | Yes |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use thermal compound between the device and heat sink for better thermal conductivity.
Biasing:
- Apply gate-source voltage (VGS) within the range of -20 V to +20 V.
- For optimal performance, use a gate drive voltage of 10 V or higher to minimize RDS(on).
Current Handling:
- Do not exceed the continuous drain current (ID) of 14 A at 25°C ambient temperature.
- For pulsed applications, ensure that the peak current does not exceed 35 A.
Thermal Management:
- Monitor the junction temperature (TJ) to avoid exceeding 150°C.
- Use forced air cooling or a heatsink with adequate surface area for high-power applications.
Storage:
- Store the device in a dry environment with temperatures between -55°C and 150°C.
- Handle with care to avoid mechanical damage and static discharge.
Electrical Testing:
- Use appropriate test equipment and procedures to avoid damaging the device.
- Ensure all connections are secure and free from shorts or open circuits.
Soldering:
- Follow recommended soldering profiles to prevent thermal shock.
- Allow the device to cool down before testing to ensure reliability.
Safety:
- Always follow safe handling practices when working with electrical components.
- Use protective gear such as gloves and safety glasses when necessary.
Inquiry - IRFB7730,IRFB7730PBF