Specifications
SKU: 8944969
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 120 | V |
Emitter-Collector Voltage | VECE | - | - | 120 | V |
Collector-Base Voltage | VCBO | - | - | 120 | V |
Base-Emitter Voltage (on) | VBE(on) | - | 1.8 | 2.3 | V |
Continuous Collector Current | IC | - | - | 10 | A |
Pulse Collector Current (t=1ms) | ICM | - | - | 15 | A |
Base Current (Continuous) | IB | - | - | 1 | A |
Power Dissipation | PD | - | - | 120 | W |
Junction Temperature | TJ | -40 | - | 150 | °C |
Storage Temperature | TSTG | -55 | - | 150 | °C |
Thermal Resistance (Junction to Case) | RthJC | - | 1.5 | - | °C/W |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Handle with care to avoid mechanical stress on the leads.
Biasing:
- Apply base current (IB) to control the collector current (IC).
- Ensure VBE is within the specified range to avoid damage.
Operating Conditions:
- Do not exceed the maximum ratings for VCEO, VECE, VCBO, IC, ICM, IB, PD, and TJ.
- Operate within the storage temperature range to prevent permanent damage.
Pulse Operation:
- For pulse operation, ensure that the pulse duration does not exceed 1 ms and that the peak current (ICM) is within limits.
Thermal Management:
- Use appropriate heat sinks to dissipate the power generated by the device.
- Monitor the junction temperature to ensure it remains below the maximum allowable value.
Storage:
- Store in a dry, cool place to prevent moisture damage.
- Avoid exposure to extreme temperatures or corrosive environments.
Testing:
- Perform initial testing at low currents and voltages to verify proper operation.
- Gradually increase the operating parameters to the desired levels while monitoring performance and temperature.
Inquiry - FD650B-S