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FD650B-S

Specifications

SKU: 8944969

BUY FD650B-S https://www.utsource.net/itm/p/8944969.html

Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCEO - - 120 V
Emitter-Collector Voltage VECE - - 120 V
Collector-Base Voltage VCBO - - 120 V
Base-Emitter Voltage (on) VBE(on) - 1.8 2.3 V
Continuous Collector Current IC - - 10 A
Pulse Collector Current (t=1ms) ICM - - 15 A
Base Current (Continuous) IB - - 1 A
Power Dissipation PD - - 120 W
Junction Temperature TJ -40 - 150 °C
Storage Temperature TSTG -55 - 150 °C
Thermal Resistance (Junction to Case) RthJC - 1.5 - °C/W

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Handle with care to avoid mechanical stress on the leads.
  2. Biasing:

    • Apply base current (IB) to control the collector current (IC).
    • Ensure VBE is within the specified range to avoid damage.
  3. Operating Conditions:

    • Do not exceed the maximum ratings for VCEO, VECE, VCBO, IC, ICM, IB, PD, and TJ.
    • Operate within the storage temperature range to prevent permanent damage.
  4. Pulse Operation:

    • For pulse operation, ensure that the pulse duration does not exceed 1 ms and that the peak current (ICM) is within limits.
  5. Thermal Management:

    • Use appropriate heat sinks to dissipate the power generated by the device.
    • Monitor the junction temperature to ensure it remains below the maximum allowable value.
  6. Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Avoid exposure to extreme temperatures or corrosive environments.
  7. Testing:

    • Perform initial testing at low currents and voltages to verify proper operation.
    • Gradually increase the operating parameters to the desired levels while monitoring performance and temperature.
(For reference only)

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