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Specifications
SKU: 8970748
IC FLASH 32M SPI 104MHZ 8SOIC
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Supply Voltage | Vcc | 2.7 | - | 3.6 | V | Operating voltage range |
| Standby Current | Icc | - | 1 | 5 | μA | Quiescent current in standby mode |
| Active Current | Icc | - | 3 | 8 | mA | Current during active operations |
| Programming Current | Ipp | - | 2 | 10 | mA | Current during programming |
| Erase Time (Sector) | Teras | - | 200 | 300 | ms | Time to erase a sector (4 KB) |
| Program Time (Page) | Tprog | - | 1.5 | 3 | ms | Time to program a page (256 or 512 bytes) |
| Write Enable Latch | WEL | - | - | - | - | Status bit indicating write enable |
| Hold/Reset | HOLD | - | - | - | - | Pin to hold the device in reset or suspend state |
| Write Protect | WP | - | - | - | - | Pin to protect against accidental writes |
| Data Retention | - | 20 | - | - | years | Guaranteed data retention time |
| Operating Temperature | Topr | -40 | - | 85 | °C | Operating temperature range |
| Storage Temperature | Tstg | -40 | - | 85 | °C | Storage temperature range |
| Package Type | - | - | - | - | SOIC-8, WSON-8 | Available package types |
| Memory Size | - | - | - | - | 32 Mbit | Total memory size |
| Organization | - | - | - | - | 4 MB x 8 | Memory organization |
| Page Size | - | - | - | - | 256/512 | Bytes per page |
| Sector Size | - | - | - | - | 4 KB | Size of a sector |
| Block Size | - | - | - | - | 64 KB | Size of a block |
| Chip Size | - | - | - | - | 16 KB | Size of a chip |
Instructions for Using W25Q32FVSSIQ
Power Supply:
- Ensure the supply voltage (Vcc) is within the range of 2.7V to 3.6V.
- Connect the Vcc pin to the power supply and GND to ground.
Initialization:
- Apply a reset by pulling the HOLD pin low for at least 10 ns.
- Release the HOLD pin to allow normal operation.
Write Protection:
- To enable write protection, pull the WP pin high.
- To disable write protection, pull the WP pin low.
Read Operations:
- Use the Read Data command (03h) to read data from the memory.
- Address the desired location and read the data sequentially.
Write Operations:
- Before writing, ensure the Write Enable Latch (WEL) is set by sending the Write Enable command (06h).
- Use the Page Program command (02h) to write data to a page.
- Wait for the write to complete before issuing another command.
Erase Operations:
- Use the Sector Erase command (20h) to erase a 4 KB sector.
- Use the Block Erase command (52h) to erase a 64 KB block.
- Use the Chip Erase command (60h) to erase the entire chip.
- Wait for the erase to complete before issuing another command.
Status Register:
- Read the status register using the Read Status Register command (05h) to check the status of the device.
- The status register includes the Write Enable Latch (WEL) and other status bits.
Power Management:
- To reduce power consumption, use the Deep Power Down (DPD) mode by sending the DPD command (B9h).
- Exit DPD mode by sending the Release from DPD command (ABh).
Handling:
- Handle the device with care to avoid static discharge.
- Store the device in a suitable environment within the specified storage temperature range.
Programming and Debugging:
- Use a compatible programmer or development board to program and debug the device.
- Refer to the datasheet for detailed timing diagrams and command sequences.
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