Share:


GT30J122 30J122 IGBT TO-247

Specifications

SKU: 8975835

BUY GT30J122 30J122 IGBT TO-247 https://www.utsource.net/itm/p/8975835.html

Parameter Symbol Test Conditions Min Typical Max Unit
Collector-Emitter Voltage V CES I C = 0, T J = 25°C - - 1200 V
Gate-Emitter Voltage V GE I G = 1 mA, T J = 25°C -20 - 20 V
Continuous Collector Current I C T C = 25°C - 30 - A
Pulse Collector Current I CM t p = 10 ms, T J = 25°C - 90 - A
Total Power Dissipation P T T C = 25°C - - 270 W
Junction Temperature T J - - - 150 °C
Storage Temperature Range T STG - -40 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure the IGBT is mounted on a heatsink to maintain proper operating temperatures.
    • Use thermal paste between the IGBT and the heatsink to improve heat dissipation.
  2. Biasing:

    • Apply a positive gate-emitter voltage (V GE) to turn on the IGBT.
    • Apply a negative gate-emitter voltage to ensure the IGBT is fully turned off.
  3. Current Limiting:

    • Do not exceed the continuous collector current (I C) or pulse collector current (I CM) ratings.
    • Use appropriate current limiting resistors if necessary.
  4. Thermal Management:

    • Monitor the junction temperature (T J) to avoid exceeding the maximum rating.
    • Ensure adequate cooling, especially during high-power operations.
  5. Handling:

    • Handle the IGBT with care to avoid mechanical damage.
    • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).
  6. Storage:

    • Store the IGBT in a dry, cool place within the specified storage temperature range (T STG).
  7. Testing:

    • Perform initial testing at low power levels to verify correct operation.
    • Gradually increase power levels while monitoring temperature and performance.
  8. Safety:

    • Always follow safety guidelines when working with high-voltage and high-current circuits.
    • Use appropriate protective equipment and follow all local regulations and standards.
(For reference only)

 Inquiry - GT30J122 30J122 IGBT TO-247