Specifications
SKU: 8975835
Parameter | Symbol | Test Conditions | Min | Typical | Max | Unit |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | V CES | I C = 0, T J = 25°C | - | - | 1200 | V |
Gate-Emitter Voltage | V GE | I G = 1 mA, T J = 25°C | -20 | - | 20 | V |
Continuous Collector Current | I C | T C = 25°C | - | 30 | - | A |
Pulse Collector Current | I CM | t p = 10 ms, T J = 25°C | - | 90 | - | A |
Total Power Dissipation | P T | T C = 25°C | - | - | 270 | W |
Junction Temperature | T J | - | - | - | 150 | °C |
Storage Temperature Range | T STG | - | -40 | - | 150 | °C |
Instructions for Use:
Mounting:
- Ensure the IGBT is mounted on a heatsink to maintain proper operating temperatures.
- Use thermal paste between the IGBT and the heatsink to improve heat dissipation.
Biasing:
- Apply a positive gate-emitter voltage (V GE) to turn on the IGBT.
- Apply a negative gate-emitter voltage to ensure the IGBT is fully turned off.
Current Limiting:
- Do not exceed the continuous collector current (I C) or pulse collector current (I CM) ratings.
- Use appropriate current limiting resistors if necessary.
Thermal Management:
- Monitor the junction temperature (T J) to avoid exceeding the maximum rating.
- Ensure adequate cooling, especially during high-power operations.
Handling:
- Handle the IGBT with care to avoid mechanical damage.
- Use anti-static precautions to prevent damage from electrostatic discharge (ESD).
Storage:
- Store the IGBT in a dry, cool place within the specified storage temperature range (T STG).
Testing:
- Perform initial testing at low power levels to verify correct operation.
- Gradually increase power levels while monitoring temperature and performance.
Safety:
- Always follow safety guidelines when working with high-voltage and high-current circuits.
- Use appropriate protective equipment and follow all local regulations and standards.
Inquiry - GT30J122 30J122 IGBT TO-247