Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the device to temperatures exceeding the maximum junction temperature (T_J(max)) of 175°C.
   • Handle the device with care to prevent damage to the leads and the body.

2. Mounting:

   • Ensure proper heat sinking to manage the thermal resistance and maintain the device within safe operating temperatures.
   • Use appropriate mounting hardware and thermal compound to enhance heat dissipation.

3. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Ensure that the gate-source voltage (V_GS) does not exceed the maximum rating of ±20V.
   • The continuous drain current (I_D) should not exceed 14A at a case temperature of 25°C.

4. Pulse Operation:

   • For pulse operation, ensure that the pulse duration (t_p) does not exceed 10 ms and the duty cycle is kept at 1% to avoid overheating.
   • The peak pulse current (I_D(p)) can reach up to 48A under these conditions.

5. Storage:

   • Store the device in a dry, cool place within the storage temperature range of -65°C to 150°C.
   • Protect the device from static electricity by using anti-static packaging.

6. Testing:

   • Perform initial testing at room temperature to verify the device parameters.
   • Gradually increase the load and monitor the device temperature to ensure it remains within safe limits.

7. Safety:

   • Always follow safety guidelines when working with high voltages and currents.
   • Use appropriate personal protective equipment (PPE) and ensure proper grounding of test equipment.

By adhering to these instructions, you can ensure reliable and efficient operation of the IRFBE30SPBF MOSFET.