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FQD13N10L,FQD13N10LTM

Specifications

SKU: 9226174

BUY FQD13N10L,FQD13N10LTM https://www.utsource.net/itm/p/9226174.html

Parameter FQD13N10L / FQD13N10LTM
Device Type N-Channel MOSFET
Voltage (Vds) (V) 100
Current (Id) (A) 13
Power Dissipation (Pd) (W) 115 (at Tc = 25°C)
Rds(on) (mΩ) 7.5 (at Vgs = 10V)
Gate Charge (Qg) (nC) 16.9
Input Capacitance (Ciss) (pF) 1490
Output Capacitance (Coss) (pF) 380
Reverse Transfer Capacitance (Crss) (pF) 350
Thermal Resistance (Rth(j-c)) (°C/W) 1.1 (TO-220) / 0.6 (TO-220F)
Operating Temperature Range (°C) -55 to 150
Package TO-220 / TO-220F

Instructions for Use:

  1. Handling and Storage:

    • Handle with care to avoid damage to the device.
    • Store in a dry environment to prevent moisture damage.
  2. Mounting:

    • Ensure proper heat sinking if operating at high power levels.
    • Use thermal paste between the device and heat sink for better thermal conductivity.
  3. Biasing:

    • Apply a gate-source voltage (Vgs) of at least 10V to ensure full enhancement and minimize Rds(on).
    • Do not exceed the maximum Vgs rating of ±20V.
  4. Operation:

    • Operate within the specified temperature range (-55°C to 150°C) to avoid thermal runaway.
    • Monitor the junction temperature to ensure it does not exceed the maximum allowable value.
  5. Testing:

    • Use a constant current source to test the device under load conditions.
    • Measure Rds(on) with a multimeter or resistance tester to verify proper operation.
  6. Safety:

    • Always use appropriate protective equipment when handling high-voltage circuits.
    • Ensure proper grounding and isolation to prevent electrical shock.
  7. Soldering:

    • Preheat the PCB to reduce thermal stress during soldering.
    • Use a temperature-controlled soldering iron and avoid excessive heat application.
  8. Troubleshooting:

    • If the device fails, check for overvoltage, overcurrent, or overheating conditions.
    • Verify the gate drive circuit for proper operation.

By following these guidelines, you can ensure reliable and efficient operation of the FQD13N10L and FQD13N10LTM MOSFETs.

(For reference only)

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