BUY TMD7185-2 https://www.utsource.net/itm/p/9259429.html
MICROWAVE POWER MMIC AMPLIFIER
The TMD7185-2 is a high-frequency, high-power transistor manufactured by Toshiba. It is designed for use in RF power amplifiers in cellular base stations and other high-power RF applications. Description: The TMD7185-2 is a high-frequency, high-power transistor designed for use in RF power amplifiers in cellular base stations and other high-power RF applications. It is manufactured using Toshiba's advanced BiCMOS process, which combines the advantages of bipolar and CMOS technologies. The device features a wide operating frequency range of up to 2.5 GHz, a high output power of up to 40 W, and a high gain of up to 15 dB. Features: Wide operating frequency range of up to 2.5 GHz High output power of up to 40 W High gain of up to 15 dB Low noise figure of up to 1.5 dB High efficiency of up to 50% Low distortion of up to -45 dBc Low input and output return losses of up to -10 dB High input and output impedance of 50 Ω Low thermal resistance of up to 0.5°C/W Applications: The TMD7185-2 is suitable for use in RF power amplifiers in cellular base stations and other high-power RF applications. It is also suitable for use in other applications such as Wi-Fi, WiMAX, and Bluetooth. (For reference only)