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CMP100N03

Specifications

SKU: 9271119

BUY CMP100N03 https://www.utsource.net/itm/p/9271119.html

Parameter Symbol Min Typ Max Unit Notes
Breakdown Voltage V(BR)DSS - 100 - V
Drain-Source On-State Resistance RDS(on) - 3.0 - mΩ @ VGS=10V, ID=20A
Gate Threshold Voltage VGS(th) 2.0 4.0 6.0 V @ ID=1mA, VDS=10V
Continuous Drain Current ID - 20 - A @ Tc=25°C
Continuous Gate-Source Voltage VGS -10 0 10 V
Total Power Dissipation PD - 180 - W @ Tc=25°C
Junction Temperature TJ -55 - 175 °C
Storage Temperature Range Tstg -55 - 150 °C
Thermal Resistance, Junction to Case RθJC - 0.9 - °C/W

Instructions for Use:

  1. Handling and Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Handle with care to avoid mechanical damage.
  2. Electrical Connections:

    • Ensure proper insulation and secure connections to avoid short circuits.
    • Use appropriate wire gauges to handle the current ratings.
  3. Thermal Management:

    • Mount on a suitable heat sink to maintain junction temperature within the specified range.
    • Ensure adequate airflow or cooling if operating at high power levels.
  4. Biasing and Operation:

    • Apply gate-source voltage (VGS) within the specified limits to avoid damage.
    • Ensure drain-source voltage (VDS) does not exceed the breakdown voltage (V(BR)DSS).
  5. Testing and Troubleshooting:

    • Test the device under controlled conditions before integrating into a circuit.
    • Monitor temperature and current to ensure safe operation.
  6. Safety Precautions:

    • Follow all relevant safety guidelines and regulations.
    • Use protective equipment when handling high-voltage or high-current circuits.
(For reference only)

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