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SEMIX453GB12E4S

Specifications

SKU: 9279111

BUY SEMIX453GB12E4S https://www.utsource.net/itm/p/9279111.html

Parameter Description Value Unit
Module Type Type of module IGBT Module -
Rated Collector-Emitter Voltage (Vce) Maximum voltage between collector and emitter 1200 V
Rated Gate-Emitter Voltage (Vge) Maximum voltage between gate and emitter ±20 V
Rated Collector Current (Ic) Continuous collector current at Tc = 25°C 450 A
Rated Collector Current (Ic) Continuous collector current at Tc = 100°C 350 A
Rated Pulse Collector Current (Icm) Non-repetitive peak collector current 1200 A
Junction Temperature (Tj) Operating junction temperature range -40 to +150 °C
Case Temperature (Tc) Operating case temperature range -40 to +125 °C
Storage Temperature (Ts) Storage temperature range -40 to +150 °C
Thermal Resistance (Rth(j-c)) Thermal resistance from junction to case 0.25 K/W
Emitter Diode Forward Voltage (Vf) Forward voltage drop of the emitter diode 1.7 V
Emitter Diode Reverse Recovery Time (trr) Reverse recovery time of the emitter diode 300 ns
Insulation Withstand Voltage (Ui) Insulation withstand voltage 2500 Vrms
Weight Module weight 1.2 kg

Instructions for Use:

  1. Mounting:

    • Ensure the mounting surface is flat and clean.
    • Apply a suitable thermal interface material (TIM) to ensure good thermal contact.
    • Torque the mounting screws to the specified value to avoid over-tightening.
  2. Electrical Connections:

    • Use appropriate wire gauges for the rated currents.
    • Ensure all connections are secure and free from corrosion.
    • Follow the recommended PCB layout guidelines to minimize parasitic inductances.
  3. Thermal Management:

    • Ensure adequate cooling, such as forced air or liquid cooling, to maintain the case temperature within the specified range.
    • Monitor the temperature during operation to prevent overheating.
  4. Gate Drive:

    • Use a gate drive circuit that provides the necessary gate-emitter voltage and current.
    • Ensure the gate drive circuit has appropriate rise and fall times to minimize switching losses.
  5. Storage and Handling:

    • Store the module in a dry, cool place away from direct sunlight.
    • Handle with care to avoid mechanical damage.
    • Use proper ESD protection when handling the module to prevent damage to sensitive components.
  6. Safety Precautions:

    • Always follow safety guidelines when working with high voltages and currents.
    • Ensure proper insulation and grounding to prevent electrical shock.
    • Regularly inspect the module and connections for signs of wear or damage.
  7. Testing:

    • Perform initial testing at low power to verify correct operation.
    • Gradually increase power levels while monitoring performance parameters.
  8. Documentation:

    • Refer to the datasheet and application notes for detailed technical information and specific application guidance.
(For reference only)

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