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Specifications
SKU: 9280697
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 40 | - | V | Continuous |
| Gate-Source Voltage | VGS | -10 | 0 | 10 | V | Continuous |
| Drain Current | ID | - | 4.0 | - | A | VGS = 10V, TJ = 25°C |
| Power Dissipation | PD | - | 130 | - | W | RθJC = 0.75°C/W, TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | Maximum |
| Storage Temperature | TSTG | -55 | - | 150 | °C | - |
| Gate Charge | QG | - | 18 | - | nC | VDS = 25V, VGS = 10V, ID = 4A |
| Input Capacitance | Ciss | - | 1650 | - | pF | VDS = 25V, f = 1MHz |
| Output Capacitance | Coss | - | 420 | - | pF | VDS = 25V, f = 1MHz |
| Reverse Transfer Capac. | Crss | - | 190 | - | pF | VDS = 25V, f = 1MHz |
| Threshold Voltage | VGS(th) | 1.0 | 1.5 | 2.0 | V | ID = 250μA, TA = 25°C |
| On-State Resistance | RDS(on) | - | 0.008 | - | Ω | VGS = 10V, ID = 4A, TA = 25°C |
| Leakage Current | IDSS | - | 10 | - | μA | VDS = 40V, TA = 25°C |
Instructions for Use:
Handling Precautions:
- Handle the FTP04N04N with care to avoid damage to the leads or body.
- Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
Mounting:
- Ensure that the device is mounted on a suitable heat sink to maintain the junction temperature within the specified limits.
- Follow the recommended PCB layout guidelines to minimize parasitic inductances and ensure optimal performance.
Biasing:
- Apply the gate-source voltage (VGS) within the specified range to avoid damage to the gate oxide.
- Ensure that the drain-source voltage (VDS) does not exceed the maximum rating to prevent breakdown.
Operation:
- Operate the device within the specified temperature range to ensure reliable performance.
- Monitor the power dissipation (PD) to avoid overheating and potential failure.
Testing:
- Use the typical parameters for testing and characterization, but ensure that the device operates within the minimum and maximum limits for reliable performance.
Storage:
- Store the device in a dry, cool environment to prevent moisture damage and degradation over time.
Derating:
- For continuous operation at temperatures above 25°C, derate the power dissipation according to the thermal resistance (RθJC) and ambient temperature (TA).
By following these instructions, you can ensure the reliable and efficient operation of the FTP04N04N MOSFET.
(For reference only)Inquiry - FTP04N04N
