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64F2144FA20V

Specifications

SKU: 9445517

BUY 64F2144FA20V https://www.utsource.net/itm/p/9445517.html

Parameter Description Value
Part Number Full part number 64F2144FA20V
Type Memory Type SRAM
Organization Organization 2M x 32
Density Density 64 Mb
Supply Voltage (Vcc) Operating supply voltage 1.8V to 3.6V
Operating Temperature Operating temperature range -40°C to +85°C
Access Time (tAA) Access time 10 ns / 15 ns
Cycle Time (tCYC) Cycle time 10 ns / 15 ns
Package Package type BGA
Pin Count Number of pins 144
Data Width Data bus width 32 bits
Power Consumption Typical power consumption 150 mW
Standby Current Standby current 5 μA
Write Cycle Write cycle time 10 ns / 15 ns
Read Cycle Read cycle time 10 ns / 15 ns
Synchronous Operation Synchronous operation support Yes
Clock Frequency Maximum clock frequency 100 MHz
CAS Latency CAS latency 2
RAS to CAS Delay RAS to CAS delay (tRCD) 2
Row Precharge Time Row precharge time (tRP) 2
Refresh Rate Refresh rate 8.192 ms (7.8 μs)
Endurance Endurance Unlimited
Reliability MTBF (Mean Time Between Failures) 1,000,000 hours

Instructions for Use

  1. Power Supply:

    • Ensure the supply voltage (Vcc) is within the specified range of 1.8V to 3.6V.
    • Connect the ground (GND) pin to a stable ground reference.
  2. Clock Signal:

    • Provide a stable clock signal to the clock input (CLK) pin. The maximum clock frequency is 100 MHz.
    • Ensure the clock signal has a clean and stable waveform to avoid timing issues.
  3. Addressing:

    • Apply the desired address to the address lines (A0-A20) during read or write operations.
    • Address lines should be stable before the active edge of the clock signal.
  4. Data Input/Output:

    • Data is input or output on the data lines (D0-D31).
    • For write operations, data should be present on the data lines before the active edge of the clock signal.
    • For read operations, data will be available on the data lines after the specified access time (tAA).
  5. Control Signals:

    • Use the chip enable (CE), output enable (OE), and write enable (WE) signals to control read and write operations.
    • Active low signals (CE, OE, WE) must be asserted at the appropriate times relative to the clock signal.
  6. Timing:

    • Adhere to the specified timing parameters such as access time (tAA), cycle time (tCYC), and other critical timings.
    • Ensure that all timing constraints are met to avoid data corruption or incorrect operation.
  7. Refresh:

    • If applicable, implement the refresh cycle to maintain data integrity. The refresh rate is 8.192 ms (7.8 μs).
  8. Handling:

    • Handle the device with care to avoid static discharge and physical damage.
    • Follow ESD (Electrostatic Discharge) guidelines during handling and installation.
  9. Storage:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Use proper storage containers and follow recommended storage practices.
  10. Testing:

    • Perform initial testing to verify correct operation and functionality.
    • Use diagnostic tools and test patterns to ensure all features are working as expected.

For detailed specifications and further information, refer to the datasheet provided by the manufacturer.

(For reference only)

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