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Specifications
SKU: 9447979
| Parameter | Description | Value |
|---|---|---|
| Device Type | Flash Memory | - |
| Manufacturer | Macronix | - |
| Part Number | M27C1001-12F6L | - |
| Memory Size | 1 Mbit (128K x 8) | - |
| Vcc Operating Voltage | Supply Voltage | 4.5V to 5.5V |
| Vpp Programming Voltage | Programming Voltage | 12V (Pin 24) |
| Data Retention | Data Retention Time | 10 years |
| Operating Temperature | Industrial Temperature Range | -40°C to +85°C |
| Package Type | DIP-28 (Dual Inline Package) | - |
| Programming Time | Typical Programming Time | 2ms (byte), 64ms (page) |
| Erase Time | Typical Erase Time | 1s (sector), 10s (chip) |
| Endurance | Write/Erase Cycles | 100,000 cycles |
| Access Time | Read Access Time | 90ns (max) |
| Standby Current | Quiescent Current | 100μA (max) |
| Active Current | Active Current | 30mA (max) |
Instructions for Use
Power Supply:
- Connect Vcc to the supply voltage (4.5V to 5.5V).
- Connect Vpp to the programming voltage (12V) on pin 24 for programming operations.
Addressing:
- The device supports 128K x 8 addressing. Address lines A0-A16 should be connected to the appropriate address bus.
Data Lines:
- Data is read from or written to the device via the D0-D7 data lines.
Control Signals:
- /CE (Chip Enable): Active low. When low, the device is selected.
- /OE (Output Enable): Active low. When low, data is output on the data lines.
- /WE (Write Enable): Active low. Used for write operations.
- /WP (Write Protect): Active low. When low, write protection is enabled.
Programming:
- To program the device, set Vpp to 12V, /CE and /WE to low, and apply the data to be written to the data lines.
- The programming time is typically 2ms per byte or 64ms per page.
Erasing:
- To erase the device, set Vpp to 12V, /CE to low, and apply the appropriate erase command.
- The erase time is typically 1 second for a sector or 10 seconds for the entire chip.
Reading:
- To read data, set Vpp to 0V, /CE and /OE to low, and apply the desired address to the address lines.
- The access time is 90ns (max).
Endurance and Data Retention:
- The device can withstand up to 100,000 write/erase cycles.
- Data retention is guaranteed for at least 10 years under specified operating conditions.
Handling Precautions:
- Handle the device with care to avoid electrostatic discharge (ESD).
- Ensure proper heat sinking during programming and erasing to prevent overheating.
Storage:
- Store the device in a dry, cool environment to maintain its performance and reliability.
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