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SVF4N65DTR

Specifications

SKU: 9468193

BUY SVF4N65DTR https://www.utsource.net/itm/p/9468193.html

Parameter Symbol Value Unit
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 4.0 A
Pulse Drain Current IDpeak 12.0 A
Total Power Dissipation PTOT 150 W
Junction Temperature TJ -55 to +175 °C
Storage Temperature TSTG -65 to +150 °C
Gate Charge QG 35 nC
Input Capacitance Ciss 1800 pF
Output Capacitance Coss 300 pF
Reverse Transfer Capacitance Crss 220 pF

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Use recommended PCB layout guidelines to minimize parasitic inductances.
  2. Gate Drive:

    • Apply gate-source voltage (VGS) within the specified range to avoid damage.
    • Use a gate resistor to control switching speed and reduce EMI.
  3. Overvoltage Protection:

    • Implement overvoltage protection circuits to prevent damage from transient voltages.
  4. Thermal Management:

    • Monitor the junction temperature to ensure it does not exceed the maximum rating.
    • Use thermal vias and adequate copper area on the PCB to improve heat dissipation.
  5. Storage:

    • Store the device in a dry environment to prevent moisture damage.
    • Handle with care to avoid mechanical stress or static discharge.
  6. Testing:

    • Follow recommended test procedures to verify device performance and reliability.
    • Use appropriate test equipment and settings to avoid damaging the device during testing.
  7. Soldering:

    • Use a soldering profile that complies with industry standards for surface mount devices.
    • Avoid excessive heat and duration during soldering to prevent thermal damage.
  8. Documentation:

    • Refer to the datasheet and application notes for detailed information and specific recommendations.
(For reference only)

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