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TK6A65D TO220F K6A65D

Specifications

SKU: 9477172

BUY TK6A65D TO220F K6A65D https://www.utsource.net/itm/p/9477172.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - 650 - V
Emitter-Collector Voltage VEBO - 7 - V
Collector Current (Continuous) IC - 10 - A
Collector Current (Pulse) IC(P) - 25 - A
Power Dissipation (Max) PTOT - 125 - W
Junction Temperature TJ -55 - 150 °C
Storage Temperature TSTG -55 - 150 °C
Forward Transconductance gfs 1.0 3.0 5.0 S
Turn-On Time ton - 0.15 0.25 μs
Turn-Off Time toff - 0.3 0.5 μs

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to manage the maximum power dissipation.
    • Use a thermal compound between the transistor and the heatsink to improve thermal conductivity.
  2. Electrical Connections:

    • Connect the collector (C), emitter (E), and gate (G) terminals correctly.
    • Ensure all connections are secure and free from shorts or open circuits.
  3. Operating Conditions:

    • Do not exceed the maximum ratings for voltage, current, and power dissipation.
    • Keep the junction temperature within the specified range to avoid damage.
  4. Storage:

    • Store in a dry, cool place away from direct sunlight and extreme temperatures.
    • Handle with care to avoid mechanical damage.
  5. Testing:

    • Use appropriate test equipment and follow safety guidelines to prevent electrical shock.
    • Test the device under controlled conditions to ensure it meets the specified parameters.
  6. Handling:

    • Use ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.
    • Avoid touching the leads or the body of the transistor directly with bare hands.
  7. Soldering:

    • Preheat the PCB to reduce thermal stress.
    • Use a soldering iron with a temperature-controlled tip.
    • Solder quickly to minimize exposure to high temperatures.
(For reference only)

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