Share:


RJP30H2 IGBT RENESAS TO3P

Specifications

SKU: 9481425

BUY RJP30H2 IGBT RENESAS TO3P https://www.utsource.net/itm/p/9481425.html

Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage (Vceo) Vceo IC = 0, Tj = 25°C - 600 - V
Collector-Emitter Saturation Voltage (Vcesat) Vcesat IC = 30A, Tj = 25°C - 1.8 - V
Emitter-Base Voltage (Vebo) Vebo IE = 1A, Tj = 25°C - 5 - V
Gate-Emitter Voltage (Vge) Vge IC = 0, Tj = 25°C -15 0 20 V
Continuous Collector Current (IC) IC Tc = 25°C - 30 - A
Pulse Collector Current (IC pulsed) ICp tp = 10ms, Tj = 25°C - 90 - A
Power Dissipation (Ptot) Ptot Tc = 25°C - 240 - W
Junction to Case Thermal Resistance (Rth(j-c)) Rth(j-c) - - 0.75 - K/W
Junction to Ambient Thermal Resistance (Rth(j-a)) Rth(j-a) - - 40 - K/W
Storage Temperature Range (Tstg) Tstg - -65 - 150 °C
Operating Junction Temperature Range (Tj) Tj - -40 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure proper mounting to a heatsink to maintain thermal performance.
    • Use a suitable thermal interface material (TIM) to enhance heat dissipation.
  2. Biasing:

    • Apply the recommended gate-emitter voltage (Vge) to ensure proper turn-on and turn-off characteristics.
    • Avoid exceeding the maximum gate-emitter voltage (Vge) to prevent damage.
  3. Current Handling:

    • Do not exceed the continuous collector current (IC) or pulse collector current (ICp) ratings.
    • Ensure adequate cooling to handle high power dissipation (Ptot).
  4. Thermal Management:

    • Monitor the junction temperature (Tj) to avoid exceeding the maximum operating temperature.
    • Use the thermal resistance values (Rth(j-c) and Rth(j-a)) to design an effective cooling system.
  5. Storage:

    • Store the device within the specified storage temperature range (Tstg) to prevent degradation.
  6. Handling:

    • Handle the device with care to avoid mechanical stress.
    • Follow ESD (Electrostatic Discharge) precautions to prevent damage to the sensitive components.
  7. Testing:

    • Perform all tests under controlled conditions to ensure accurate measurements.
    • Refer to the datasheet for detailed test conditions and procedures.
(For reference only)

 Inquiry - RJP30H2 IGBT RENESAS TO3P