Share:


60M324

Specifications

SKU: 9510072

BUY 60M324 https://www.utsource.net/itm/p/9510072.html

Parameter Description Value Unit
Part Number Unique identifier for the component 60M324 -
Type Type of component MOSFET -
Package Encapsulation type TO-220 -
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current 32 A
PTOT Total Power Dissipation (at TC = 25°C) 110 W
RDS(on) On-State Resistance (VGS = 10V) 5.5
fT Transition Frequency 3.5 MHz
QG Gate Charge 95 nC
QGD Gate-Drain Charge 28 nC
VGS(th) Gate Threshold Voltage 2.0 to 4.0 V
TJ Junction Temperature Range -55 to 175 °C
TSTG Storage Temperature Range -65 to 150 °C

Instructions:

  1. Handling:

    • Handle with care to avoid damage to the leads and body.
    • Use appropriate ESD protection to prevent damage from static electricity.
  2. Mounting:

    • Ensure proper alignment of the component during mounting.
    • Apply thermal paste between the heatsink and the component for better heat dissipation.
    • Torque the screws to the recommended values to ensure good thermal contact without damaging the component.
  3. Operating Conditions:

    • Do not exceed the maximum ratings specified in the table.
    • Ensure that the junction temperature (TJ) remains within the specified range to avoid thermal runaway.
    • Use a heatsink if necessary to keep the temperature within safe limits.
  4. Testing:

    • Use a multimeter to check for continuity and resistance values.
    • Perform functional tests under controlled conditions to verify performance.
  5. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Keep in original packaging until ready for use to protect from moisture and static.
  6. Disposal:

    • Follow local regulations for the disposal of electronic components.
    • Recycle or dispose of the component responsibly.
(For reference only)

 Inquiry - 60M324