Instructions for Use:

1. Mounting and Handling:

   • Ensure that the MOSFET is handled with care to avoid damage to the leads and the body.
   • Use proper heat sinks to manage the thermal dissipation, especially when operating at high currents or power levels.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly according to the circuit diagram.
   • Ensure that the gate-source voltage (V_GS) does not exceed the maximum ratings to prevent damage to the device.

3. Thermal Management:

   • The device can dissipate up to 180W of power. Use appropriate heat sinks and cooling methods to keep the junction temperature within safe limits.
   • Monitor the junction temperature to ensure it does not exceed 175°C.

4. Pulse Operation:

   • When using the MOSFET in pulse applications, ensure that the pulse duration does not exceed the specified limit (10 ms) to avoid overheating and potential damage.

5. Storage:

   • Store the device in a dry, cool place within the temperature range of -55°C to 150°C.
   • Avoid exposure to high humidity and corrosive environments.

6. Safety Precautions:

   • Always use appropriate safety measures when working with high voltages and currents.
   • Follow all relevant electrical safety standards and guidelines.

7. Testing:

   • Before installing the MOSFET in a final application, test it under controlled conditions to ensure it meets the required performance specifications.

By following these instructions, you can ensure optimal performance and longevity of the HY1908P TO-220 N-CH 80V 90A MOSFET.