Share:


2SC829-B

Specifications

SKU: 9510615

BUY 2SC829-B https://www.utsource.net/itm/p/9510615.html

Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCE - - 60 V
Collector-Base Voltage VCB - - 60 V
Emitter-Base Voltage VEB - - 5 V
Collector Current IC - - 150 mA
Base Current IB - - 15 mA
Power Dissipation PT - - 350 mW
Forward Current Transfer Ratio (hFE) hFE 40 100 300 -
Storage Temperature TSTG -55 - 150 °C
Operating Temperature TA -55 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure that the transistor is mounted on a suitable heat sink if operating at high power levels.
    • Avoid mechanical stress on the leads during soldering or handling.
  2. Soldering:

    • Use a temperature-controlled soldering iron set to a maximum of 300°C.
    • Soldering time should not exceed 10 seconds per lead.
  3. Biasing:

    • Ensure that the base current (IB) is sufficient to fully saturate the transistor when used as a switch.
    • For linear applications, bias the transistor to operate in the active region to avoid distortion.
  4. Protection:

    • Use appropriate protection circuits such as clamping diodes to protect against transient voltage spikes.
    • Consider using a base resistor to limit base current and prevent damage.
  5. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Handle with care to avoid static discharge which can damage the device.
  6. Testing:

    • Use a multimeter or a transistor tester to verify the functionality of the transistor before installation.
    • Test the VCE, VBE, and hFE parameters to ensure they meet the specified values.
  7. Safety:

    • Always follow proper electrical safety procedures when working with circuits containing transistors.
    • Disconnect power sources before making any connections or modifications.
(For reference only)

 Inquiry - 2SC829-B