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Specifications
SKU: 9520011
| Parameter | 2SD1415 | B1020 |
|---|---|---|
| Type | NPN Transistor | PNP Transistor |
| Collector-Emitter Voltage (Vce) | 60V | 80V |
| Collector Base Voltage (Vcb) | 60V | 80V |
| Emitter-Base Voltage (Veb) | 5V | 5V |
| Collector Current (Ic) | 1A | 1.5A |
| Power Dissipation (Ptot) | 65W | 80W |
| DC Current Gain (hFE) | 100 - 300 | 70 - 200 |
| Transition Frequency (fT) | 300MHz | 200MHz |
| Storage Temperature Range (Tstg) | -55°C to 150°C | -55°C to 150°C |
| Operating Temperature Range (Toper) | -55°C to 150°C | -55°C to 150°C |
Instructions for Use:
2SD1415:
Mounting:
- Ensure proper heat sinking if operating near maximum power dissipation.
- Use a thermal compound between the transistor and heat sink for better thermal conductivity.
Biasing:
- Apply a suitable base current to achieve the desired collector current.
- Ensure the base-emitter voltage does not exceed 5V.
Protection:
- Use a series resistor with the base to limit current.
- Consider adding a flyback diode across inductive loads to protect against voltage spikes.
Handling:
- Handle with care to avoid mechanical stress on the leads.
- Follow ESD (Electrostatic Discharge) precautions to prevent damage.
B1020:
Mounting:
- Similar to the 2SD1415, ensure proper heat sinking if operating near maximum power dissipation.
- Use a thermal compound between the transistor and heat sink for better thermal conductivity.
Biasing:
- Apply a suitable base current to achieve the desired collector current.
- Ensure the base-emitter voltage does not exceed 5V.
Protection:
- Use a series resistor with the base to limit current.
- Consider adding a flyback diode across inductive loads to protect against voltage spikes.
Handling:
- Handle with care to avoid mechanical stress on the leads.
- Follow ESD (Electrostatic Discharge) precautions to prevent damage.
Inquiry - 2SD1415,B1020
