Specifications
SKU: 9521499
MRF21045LR3 NI-400
Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCE(O) | IC = 0, IE = 0 | - | 100 | - | V |
Emitter-Base Voltage | VEB(O) | IC = 0, IE = 0 | - | 7 | - | V |
Collector Current | IC | VCE = 50V | - | 20 | - | A |
Power Dissipation | PT | TA = 25°C | - | 150 | - | W |
Junction Temperature | TJ | - | - | 150 | - | °C |
Storage Temperature | TSTG | - | -55 | - | 150 | °C |
Thermal Resistance | RθJC | Junction to Case | - | 0.5 | - | °C/W |
Transition Frequency | fT | IC = 1A, VCE = 10V | - | 120 | - | MHz |
Saturation Voltage | VCE(sat) | IC = 10A, IB = 1A | - | 2.5 | - | V |
Instructions for Using MRF21045L / MRF21045
Handling and Storage:
- Store the device in a dry, cool environment to prevent moisture damage.
- Handle the device with care to avoid mechanical stress or damage to the leads.
Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified limits.
- Use appropriate mounting hardware to secure the device firmly to the heat sink.
Biasing:
- Apply the base current (IB) carefully to ensure the collector current (IC) does not exceed the maximum rating.
- Use a suitable biasing network to maintain stable operation under varying load conditions.
Power Dissipation:
- Monitor the power dissipation (PT) to ensure it does not exceed the maximum rating, especially at higher ambient temperatures.
- Consider derating the power dissipation if operating at temperatures above 25°C.
Thermal Management:
- Ensure adequate cooling to keep the junction temperature (TJ) below 150°C.
- Use thermal paste between the device and the heat sink to improve thermal conductivity.
Electrical Connections:
- Use short, low-inductance leads to minimize parasitic effects.
- Ensure all connections are secure and free from corrosion or oxidation.
Testing:
- Perform initial testing at low power levels to verify proper operation.
- Gradually increase the power levels while monitoring the device parameters to ensure they remain within safe operating limits.
Protection:
- Implement overvoltage and overcurrent protection circuits to safeguard the device from transient conditions.
- Use appropriate clamping diodes to protect against reverse voltage spikes.
By following these guidelines, you can ensure reliable and efficient operation of the MRF21045L / MRF21045 transistor.
(For reference only)Inquiry - MRF21045L MRF21045