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MRF21045L MRF21045

Specifications

SKU: 9521499

BUY MRF21045L MRF21045 https://www.utsource.net/itm/p/9521499.html
MRF21045LR3 NI-400
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Voltage VCE(O) IC = 0, IE = 0 - 100 - V
Emitter-Base Voltage VEB(O) IC = 0, IE = 0 - 7 - V
Collector Current IC VCE = 50V - 20 - A
Power Dissipation PT TA = 25°C - 150 - W
Junction Temperature TJ - - 150 - °C
Storage Temperature TSTG - -55 - 150 °C
Thermal Resistance RθJC Junction to Case - 0.5 - °C/W
Transition Frequency fT IC = 1A, VCE = 10V - 120 - MHz
Saturation Voltage VCE(sat) IC = 10A, IB = 1A - 2.5 - V

Instructions for Using MRF21045L / MRF21045

  1. Handling and Storage:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Handle the device with care to avoid mechanical stress or damage to the leads.
  2. Mounting:

    • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
    • Use appropriate mounting hardware to secure the device firmly to the heat sink.
  3. Biasing:

    • Apply the base current (IB) carefully to ensure the collector current (IC) does not exceed the maximum rating.
    • Use a suitable biasing network to maintain stable operation under varying load conditions.
  4. Power Dissipation:

    • Monitor the power dissipation (PT) to ensure it does not exceed the maximum rating, especially at higher ambient temperatures.
    • Consider derating the power dissipation if operating at temperatures above 25°C.
  5. Thermal Management:

    • Ensure adequate cooling to keep the junction temperature (TJ) below 150°C.
    • Use thermal paste between the device and the heat sink to improve thermal conductivity.
  6. Electrical Connections:

    • Use short, low-inductance leads to minimize parasitic effects.
    • Ensure all connections are secure and free from corrosion or oxidation.
  7. Testing:

    • Perform initial testing at low power levels to verify proper operation.
    • Gradually increase the power levels while monitoring the device parameters to ensure they remain within safe operating limits.
  8. Protection:

    • Implement overvoltage and overcurrent protection circuits to safeguard the device from transient conditions.
    • Use appropriate clamping diodes to protect against reverse voltage spikes.

By following these guidelines, you can ensure reliable and efficient operation of the MRF21045L / MRF21045 transistor.

(For reference only)

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