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2SD1062 D1062

Specifications

SKU: 9530233

BUY 2SD1062 D1062 https://www.utsource.net/itm/p/9530233.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCE - 450 - V
Emitter-Base Voltage VEB - 5 - V
Collector Current IC - 15 - A
Base Current IB - 3 - A
Power Dissipation PT - 180 - W
Junction Temperature TJ - - 150 °C
Storage Temperature TSTG -55 - 150 °C
Transition Frequency fT - 10 - MHz

Instructions for Use:

  1. Handling:

    • Handle the 2SD1062 with care to avoid mechanical damage.
    • Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
  2. Mounting:

    • Ensure the mounting surface is clean and flat.
    • Apply thermal compound between the transistor and the heatsink for optimal heat dissipation.
    • Tighten the mounting screws evenly to avoid warping the transistor or the heatsink.
  3. Biasing:

    • Ensure the base current (IB) is sufficient to fully saturate the transistor when it is intended to be on.
    • Use appropriate resistors to limit the base current and protect the transistor from overcurrent conditions.
  4. Operating Conditions:

    • Do not exceed the maximum ratings for collector-emitter voltage (VCE), collector current (IC), and power dissipation (PT).
    • Monitor the junction temperature (TJ) to ensure it does not exceed 150°C.
  5. Storage:

    • Store the 2SD1062 in a dry, cool place within the storage temperature range (-55°C to 150°C).
  6. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the 2SD1062 before installation.
    • Test the circuit under controlled conditions to ensure all components are functioning correctly.
  7. Safety:

    • Always follow safety guidelines when working with high voltages and currents.
    • Use appropriate personal protective equipment (PPE) such as gloves and safety glasses.
(For reference only)

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