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UM2147-1

Specifications

SKU: 9741876

BUY UM2147-1 https://www.utsource.net/itm/p/9741876.html

Parameter Description Value Unit
Part Number Device Identifier UM2147-1 -
Type Component Type MOSFET -
VDS Drain-to-Source Voltage 600 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current 14 A
RDS(on) On-State Resistance at VGS = 10V 0.085 Ω
PTOT Total Power Dissipation (TC = 25°C) 130 W
TJ Junction Temperature Range -55 to 150 °C
TSTG Storage Temperature Range -65 to 150 °C
Package Housing Type TO-220 -

Instructions for Use:

  1. Handling Precautions:

    • Handle the device with care to avoid damage.
    • Use proper ESD (Electrostatic Discharge) protection when handling the MOSFET.
  2. Mounting:

    • Ensure the mounting surface is clean and flat.
    • Use a suitable heat sink to manage thermal dissipation, especially if operating near maximum power.
  3. Soldering:

    • Solder the device at a temperature not exceeding 260°C for a duration of 10 seconds.
    • Allow the device to cool naturally after soldering.
  4. Electrical Connections:

    • Connect the drain, source, and gate terminals as per the circuit diagram.
    • Ensure the gate voltage does not exceed the specified VGS limits to prevent damage.
  5. Testing:

    • Test the device in a controlled environment to ensure it meets the specified parameters.
    • Monitor the temperature during testing to avoid overheating.
  6. Storage:

    • Store the device in a dry, cool place away from direct sunlight.
    • Keep the device in its original packaging until ready for use to protect against static damage.
(For reference only)

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