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12C5410AD

Specifications

SKU: 9742075

BUY 12C5410AD https://www.utsource.net/itm/p/9742075.html

Parameter Symbol Min Typ Max Unit Description
Supply Voltage VDD 2.0 5.0 5.5 V Operating voltage range
Operating Temperature Toper -40 - 85 °C Temperature range for operation
Storage Temperature Tstg -65 - 150 °C Temperature range for storage
Maximum Current IDD - - 200 μA Maximum current consumption
EEPROM Write Time tWR 1 - 10 ms Time required to write to EEPROM
Reset Input Low Voltage VRL 0 - 0.8 V Maximum reset input low voltage
Reset Input High Voltage VRH 2.0 - 5.5 V Minimum reset input high voltage
Reset Input Current IR - - 1 μA Maximum reset input current
Clock Frequency Range fOSC 0 - 20 MHz Range of clock frequencies supported
Program Memory Size PM - 4 - K x 14 Size of program memory (words)
Data Memory Size DM - 256 - B Size of data memory (bytes)
EEPROM Memory Size EEPROM - 128 - B Size of EEPROM memory (bytes)

Instructions

  1. Power Supply:

    • Ensure the supply voltage ( V_ ) is within the range of 2.0V to 5.5V.
    • Use appropriate decoupling capacitors near the power pins to stabilize the supply voltage.
  2. Temperature Considerations:

    • The device operates within a temperature range of -40°C to 85°C.
    • Store the device in temperatures between -65°C and 150°C.
  3. Current Consumption:

    • The maximum current consumption is 200 μA. Design the power supply to handle this load.
  4. Reset Input:

    • The reset input should be pulled low (0V to 0.8V) to initiate a reset.
    • The reset input should be pulled high (2.0V to 5.5V) for normal operation.
    • Ensure the reset input current does not exceed 1 μA.
  5. Clock Configuration:

    • The device supports clock frequencies from 0 Hz to 20 MHz.
    • Use an external oscillator or crystal as needed to achieve the desired clock frequency.
  6. Memory Management:

    • The device has 4K x 14 bits of program memory, 256 bytes of data memory, and 128 bytes of EEPROM.
    • Ensure proper initialization and management of these memory areas in your code.
  7. EEPROM Write Operations:

    • Writing to the EEPROM takes between 1 ms and 10 ms.
    • Avoid performing other operations during EEPROM writes to prevent data corruption.
  8. Programming and Debugging:

    • Use an appropriate programmer and software development environment to write and debug code.
    • Refer to the device datasheet for specific programming instructions and pin configurations.
  9. Handling and Storage:

    • Handle the device with care to avoid static damage.
    • Store the device in a dry, cool place to ensure longevity.
  10. Safety and Compliance:

    • Ensure compliance with relevant safety standards and regulations.
    • Follow best practices for PCB design and layout to minimize electromagnetic interference (EMI).
(For reference only)

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