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Specifications
SKU: 9773578
Silicon RF Devices RF High Power MOS FETs (Discrete) RD16HHF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
| Parameter | RD16HHF1 | RD16HHF1-101 |
|---|---|---|
| Type | N-Channel MOSFET | N-Channel MOSFET |
| Package | TO-220AB | TO-220AB |
| Drain-Source Voltage (VDS) | 60V | 60V |
| Gate-Source Voltage (VGS) | ±20V | ±20V |
| Continuous Drain Current (ID) | 16A at 25°C case temp | 16A at 25°C case temp |
| Pulsed Drain Current (IDM) | 50A (10ms, 1% duty cycle) | 50A (10ms, 1% duty cycle) |
| Total Power Dissipation (PD) | 115W at 25°C ambient | 115W at 25°C ambient |
| RDS(on) @ VGS=10V | 4.5mΩ max | 4.5mΩ max |
| RDS(on) @ VGS=4.5V | 8.5mΩ max | 8.5mΩ max |
| Gate Charge (Qg) | 45nC max | 45nC max |
| Input Capacitance (Ciss) | 1720pF max | 1720pF max |
| Output Capacitance (Coss) | 390pF max | 390pF max |
| Reverse Transfer Capacitance (Crss) | 120pF max | 120pF max |
| Operating Temperature (TJ) | -55°C to +150°C | -55°C to +150°C |
| Storage Temperature (TSTG) | -55°C to +150°C | -55°C to +150°C |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified range.
- Use thermal compound between the device and the heat sink for optimal thermal performance.
Biasing:
- Apply a gate-source voltage (VGS) of at least 10V to ensure the MOSFET is fully on and has the lowest RDS(on).
- Avoid exceeding the maximum VGS rating to prevent damage to the gate.
Current Handling:
- Do not exceed the continuous drain current (ID) or pulsed drain current (IDM) ratings.
- Ensure adequate cooling for high current applications to prevent overheating.
Power Dissipation:
- Monitor the power dissipation (PD) to avoid exceeding the maximum rating.
- Use a heatsink with sufficient thermal capacity to dissipate the heat generated.
Capacitance Considerations:
- Account for the input, output, and reverse transfer capacitances in high-frequency applications to minimize switching losses.
Storage and Handling:
- Store the devices in a dry, cool environment to prevent moisture damage.
- Handle with care to avoid mechanical stress or damage to the leads.
ESD Protection:
- Use appropriate ESD protection measures when handling the MOSFETs to prevent damage from static electricity.
Inquiry - RD16HHF1,RD16HHF1-101
