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2SK1215IGETL-E

Specifications

SKU: 9774691

BUY 2SK1215IGETL-E https://www.utsource.net/itm/p/9774691.html

Parameter Symbol Min Typ Max Unit Notes
Drain-Source Voltage VDS - 300 - V
Gate-Source Voltage VGS -20 - 20 V
Continuous Drain Current ID - 10 - A
Pulsed Drain Current ID pulsed - 30 - A
Power Dissipation PTOT - 125 - W
Junction Temperature TJ - - 175 °C
Storage Temperature TSTG -65 - 150 °C
Thermal Resistance RθJC - 0.8 - K/W

Instructions for Use:

  1. Handling Precautions:

    • The 2SK1215IGETL-E is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection.
    • Avoid exceeding the maximum ratings specified in the table to prevent damage to the device.
  2. Mounting:

    • Ensure proper heat sinking to maintain the junction temperature within safe limits, especially under high power dissipation conditions.
    • Use recommended mounting torque for the screws to ensure good thermal contact without damaging the device.
  3. Biasing:

    • Apply the gate-source voltage (VGS) carefully to avoid exceeding the maximum ratings.
    • For optimal performance, operate within the recommended biasing conditions provided by the manufacturer.
  4. Operation:

    • Monitor the drain current (ID) and power dissipation (PTOT) during operation to ensure they do not exceed the specified limits.
    • Use the device within the operating temperature range to ensure reliable performance and longevity.
  5. Storage:

    • Store the device in a dry, cool environment to prevent moisture-related damage.
    • Keep the device in its original packaging until ready for use to protect it from physical damage and ESD.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)

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