Specifications
SKU: 9774991
Parameter | Description | Value | Unit |
---|---|---|---|
Part Number | Component Identifier | 40T65FDSC B | - |
Type | Component Type | MOSFET | - |
VDS | Drain-Source Voltage | 650 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID | Continuous Drain Current | 40 | A |
RDS(on) | On-State Resistance at 10V VGS | 0.045 | Ω |
Ptot | Total Power Dissipation | 250 | W |
TJ | Junction Temperature Range | -55 to +175 | °C |
Package | Housing Type | D2PAK (TO-263) | - |
Lead Finish | Lead Surface Treatment | Matte Tin | - |
Instructions for Use:
Mounting:
- Ensure the heatsink is properly attached to the MOSFET to manage heat dissipation effectively.
- Use thermal paste between the MOSFET and heatsink to improve thermal conductivity.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly to avoid damage.
- Use short, low-inductance leads for high-frequency applications.
Gate Drive:
- Apply a gate voltage within the specified range (±20V) to ensure reliable operation.
- Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Thermal Management:
- Monitor the junction temperature to ensure it stays within the operational range (-55°C to +175°C).
- Consider forced air cooling or other cooling methods for high-power applications.
Storage:
- Store the MOSFET in a dry, cool environment to prevent moisture damage.
- Handle with care to avoid mechanical stress on the leads and package.
ESD Protection:
- Use proper ESD protection measures when handling the MOSFET to prevent damage from static electricity.
- Ground yourself and use an ESD wrist strap if necessary.
Testing:
- Perform initial testing at lower power levels to verify correct operation before moving to full load conditions.
- Use a multimeter to check continuity and resistance values to ensure the MOSFET is functioning correctly.
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