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40T65FDSC B

Specifications

SKU: 9774991

BUY 40T65FDSC B https://www.utsource.net/itm/p/9774991.html

Parameter Description Value Unit
Part Number Component Identifier 40T65FDSC B -
Type Component Type MOSFET -
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current 40 A
RDS(on) On-State Resistance at 10V VGS 0.045 Ω
Ptot Total Power Dissipation 250 W
TJ Junction Temperature Range -55 to +175 °C
Package Housing Type D2PAK (TO-263) -
Lead Finish Lead Surface Treatment Matte Tin -

Instructions for Use:

  1. Mounting:

    • Ensure the heatsink is properly attached to the MOSFET to manage heat dissipation effectively.
    • Use thermal paste between the MOSFET and heatsink to improve thermal conductivity.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly to avoid damage.
    • Use short, low-inductance leads for high-frequency applications.
  3. Gate Drive:

    • Apply a gate voltage within the specified range (±20V) to ensure reliable operation.
    • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
  4. Thermal Management:

    • Monitor the junction temperature to ensure it stays within the operational range (-55°C to +175°C).
    • Consider forced air cooling or other cooling methods for high-power applications.
  5. Storage:

    • Store the MOSFET in a dry, cool environment to prevent moisture damage.
    • Handle with care to avoid mechanical stress on the leads and package.
  6. ESD Protection:

    • Use proper ESD protection measures when handling the MOSFET to prevent damage from static electricity.
    • Ground yourself and use an ESD wrist strap if necessary.
  7. Testing:

    • Perform initial testing at lower power levels to verify correct operation before moving to full load conditions.
    • Use a multimeter to check continuity and resistance values to ensure the MOSFET is functioning correctly.
(For reference only)

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