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Specifications
SKU: 9775455
| Parameter | Description | Value |
|---|---|---|
| Part Number | Component Identifier | KTA2400-GR |
| Type | Component Type | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) |
| Package | Housing Type | TO-247-3L |
| VDS (Max) | Drain-to-Source Voltage | 200 V |
| VGS (Max) | Gate-to-Source Voltage | ±20 V |
| ID (Continuous) | Continuous Drain Current | 24 A |
| RDS(on) | On-State Resistance at 10 V VGS | 5.5 mΩ |
| Power Dissipation (PTOT) | Total Power Dissipation (at TC = 25°C) | 240 W |
| Junction Temperature (TJ) | Maximum Junction Temperature | -55°C to +175°C |
| Storage Temperature (TSTG) | Storage Temperature Range | -65°C to +150°C |
| Thermal Resistance (RθJC) | Junction-to-Case Thermal Resistance | 0.45°C/W |
| Thermal Resistance (RθJA) | Junction-to-Ambient Thermal Resistance | 40°C/W |
Instructions for Use:
Handling Precautions:
- Handle the KTA2400-GR with care to avoid static discharge, which can damage the MOSFET.
- Use ESD (Electrostatic Discharge) protection equipment when handling the component.
Mounting:
- Ensure proper heat sinking to manage the thermal resistance and prevent overheating.
- Use a thermal compound between the MOSFET and the heatsink to improve thermal conductivity.
Biasing:
- Apply the gate voltage carefully to avoid exceeding the maximum VGS rating.
- Use a gate resistor to limit the current and protect the gate from overvoltage spikes.
Operating Conditions:
- Operate within the specified temperature range to ensure reliable performance.
- Monitor the junction temperature to avoid exceeding the maximum TJ.
Testing:
- Test the MOSFET using a suitable test setup that mimics the actual operating conditions.
- Verify the on-state resistance and other parameters to ensure the component is functioning correctly.
Storage:
- Store the KTA2400-GR in a dry, cool place within the specified storage temperature range.
- Keep the component in its original packaging until ready for use to protect it from environmental factors.
Inquiry - KTA2400-GR
