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2SC2878-B/A

Specifications

SKU: 9775926

BUY 2SC2878-B/A https://www.utsource.net/itm/p/9775926.html

Parameter Symbol Min Typical Max Unit Conditions
Collector-Emitter Voltage VCE - - 100 V
Base-Emitter Voltage VBE - 1.8 2.5 V IC = 150 mA, TA = 25°C
Collector Current IC - - 150 mA
Base Current IB - - 15 mA
DC Current Gain hFE 100 300 600 - IC = 150 mA, VCE = 10 V, TA = 25°C
Transition Frequency fT - 200 400 MHz IC = 150 mA, VCE = 10 V, TA = 25°C
Power Dissipation PT - - 625 mW TC = 25°C
Junction Temperature TJ - - 150 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Handling:

    • Handle with care to avoid damage to the leads and body.
    • Use proper ESD (Electrostatic Discharge) protection when handling.
  2. Mounting:

    • Ensure proper alignment of the transistor during mounting.
    • Use a heat sink if continuous operation at high power levels is required.
  3. Biasing:

    • Ensure that the base-emitter voltage (VBE) is within the specified range to prevent damage.
    • Use appropriate biasing circuits to maintain stable operation.
  4. Operating Conditions:

    • Do not exceed the maximum ratings for collector-emitter voltage (VCE), collector current (IC), and power dissipation (PT).
    • Operate within the specified temperature range to ensure reliable performance.
  5. Testing:

    • Use a multimeter or a transistor tester to verify the functionality of the transistor.
    • Measure the hFE (DC current gain) to ensure it falls within the typical range.
  6. Storage:

    • Store in a dry, cool place away from direct sunlight and sources of heat.
    • Keep in original packaging to protect from static and physical damage.
(For reference only)

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